IRF7240PBF International Rectifier, IRF7240PBF Datasheet - Page 2
IRF7240PBF
Manufacturer Part Number
IRF7240PBF
Description
MOSFET P-CH 40V 10.5A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Specifications of IRF7240PBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
15 mOhm @ 10.5A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
10.5A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
9250pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Channel Type
P
Current, Drain
-10.5 A
Gate Charge, Total
73 nC
Package Type
SO-8
Polarization
P-Channel
Power Dissipation
2.5 W
Resistance, Drain To Source On
0.025 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
210 ns
Time, Turn-on Delay
52 ns
Transconductance, Forward
17 S
Voltage, Breakdown, Drain To Source
-40 V
Voltage, Drain To Source
–40 V
Voltage, Forward, Diode
-1.2 V
Voltage, Gate To Source
±20 V
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.015Ohm
Drain-source On-volt
40V
Gate-source Voltage (max)
±20V
Drain Current (max)
10.5A
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
Notes:
V
∆V
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
R
I
SM
S
rr
d(on)
r
d(off)
f
DSS
fs
(BR)DSS
GS(th)
SD
2
iss
oss
rss
rr
g
gs
gd
DS(on)
(BR)DSS
Repetitive rating; pulse width limited by
Pulse width ≤ 400µs; duty cycle ≤
max. junction temperature.
/∆T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Parameter
Parameter
J
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
––– -0.025 –––
–––
–––
-1.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 9250 –––
–––
–––
–––
–––
–––
Surface mounted on 1 in square Cu board, t ≤
–––
-40
17
–––
––– 0.015
––– 0.025
–––
–––
–––
–––
––– -100
–––
490
210
580
520
–––
73
31
17
52
97
43
75
-1.2
–––
-3.0
–––
100
110
–––
–––
–––
–––
–––
–––
110
-15
-25
47
26
65
2.5
43
V/°C
nC
pF
ns
nC
V
V
Ω
V
S
di/dt = -100A/µs
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
V
ƒ = 1.0kHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
G
= -10.5A
= -1.0A
= 25°C, I
= 25°C, I
= 6.0Ω
= 0V, I
= -10V, I
= -4.5V, I
= V
= -10V, I
= -32V, V
= -32V, V
= -20V
= 20V
= -20V
= -10V
= -20V
= -10V
= 0V
= -25V
GS
Conditions
, I
D
S
F
D
Conditions
= -250µA
D
D
= -2.5A
= -2.5A, V
D
GS
GS
= -250µA
= -10.5A
= -10.5A
= -8.4A
= 0V
= 0V, T
D
= -1mA
GS
J
= 70°C
G
= 0V
D
S