STB16NS25T4 STMicroelectronics, STB16NS25T4 Datasheet

MOSFET N-CH 250V 16A D2PAK

STB16NS25T4

Manufacturer Part Number
STB16NS25T4
Description
MOSFET N-CH 250V 16A D2PAK
Manufacturer
STMicroelectronics
Series
MESH OVERLAY™r
Datasheet

Specifications of STB16NS25T4

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
280 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
80nC @ 10V
Input Capacitance (ciss) @ Vds
1270pF @ 25V
Power - Max
140W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STB16NS25T4
Manufacturer:
ST
Quantity:
12 500
Part Number:
STB16NS25T4
Manufacturer:
ST
0
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performance. The new patented STrip layout cou-
pled with the Company’s proprietary edge termina-
tion structure, makes it suitable in coverters for
lighting applications.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
February 2003
STB16NS25
TYPICAL R
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
HIGH CURRENT, HIGH SPEED SWITCHING
SWITH MODE POWER SUPPLIES (SMPS)
DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
dv/dt (1)
Symbol
I
V
DM
P
V
V
T
DGR
TOT
I
I
T
stg
DS
GS
TYPE
D
D
j
( )
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuos) at T
Drain Current (continuos) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
DS
(on) = 0.23
250 V
V
DSS
< 0.28
R
DS(on)
C
GS
Parameter
= 25°C
GS
= 20 k )
= 0)
N-CHANNEL 250V - 0.23 - 16A D
C
C
= 25°C
= 100°C
16 A
I
D
(1) I
MESH OVERLAY™ MOSFET
SD
INTERNAL SCHEMATIC DIAGRAM
16A, di/dt 300 A/ s, V
–65 to 175
D
DD
Value
2
± 20
PAK
250
250
140
175
STB16NS25
16
11
64
1
5
V
(BR)DSS
1
3
, Tj T
jMAX
2
PAK
W/°C
V/ns
Unit
°C
°C
W
V
V
V
A
A
A
1/9

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STB16NS25T4 Summary of contents

Page 1

... EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstanding performance. The new patented STrip layout cou- pled with the Company’s proprietary edge termina- tion structure, makes it suitable in coverters for lighting applications ...

Page 2

STB16NS25 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche ...

Page 3

ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol Parameter t Turn-on Delay Time d(on) t Rise Time r Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain Charge gd SWITCHING OFF Symbol Parameter t Turn-off- Delay Time d(off) Fall Time ...

Page 4

STB16NS25 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/9 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...

Page 5

Normalized Gate Thereshold Voltage vs Temp. Source-drain Diode Forward Characteristics Normalized On Resistance vs Temperature Normalized BVDSS vs Temperature STB16NS25 5/9 ...

Page 6

STB16NS25 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test ...

Page 7

D mm. DIM. MIN. TYP A 4.4 A1 2.49 A2 0.03 B 0.7 B2 1.14 C 0.45 C2 1. 8 1.27 L3 1.4 M 2.4 R 0.4 V2 ...

Page 8

STB16NS25 2 D PAK FOOTPRINT TAPE AND REEL SHIPMENT (suffix ”T4”)* TAPE MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 ...

Page 9

... No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied ...

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