IRL1104STRLPBF International Rectifier, IRL1104STRLPBF Datasheet - Page 2

• Manufacturer Part Number: IRL1104STRLPBF
• Description: MOSFET N-CH 40V 104A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL1104STRLPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 62A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 104A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 68nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3445pF @ 25V
• Power - Max: 2.4W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRL1104S/LPbF

ƒ
‚
Source-Drain Ratings and Characteristics
Notes:
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
L
V
∆V
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
t
d(on)
d(off)
f
S
on
r
SM
rr
S
fs
(BR)DSS
GS(th)
SD
iss
oss
rss
Repetitive rating; pulse width limited by
For recommended footprint and soldering techniques refer to application note #AN-994.
g
gs
gd
I
2
rr
V
T
max. junction temperature. ( See fig. 11 )
R
(BR)DSS
SD
J
DD
G
≤ 175°C
≤ 62A, di/dt ≤ 217A/µs, V
= 25Ω, I
= 15V, starting T
/∆T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
AS
= 62A. (See Figure 12)
J
= 25°C, L = 0.18mH
Parameter
DD
≤ V
(BR)DSS
J
,
†
„
…
Calculated continuous current based on maximum allowable
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRL1104 data and test conditions.
junction temperature;for recommended current-handling of the
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
package refer to Design Tip # 93-4
1.0
Min. Typ. Max. Units
40
53
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
3445 –––
1065 –––
0.04 –––
7.5
270
–––
––– 0.008
––– 0.012
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
257
–––
–––
–––
223
18
32
64
84
104
–––
–––
–––
250
100
–––
–––
–––
–––
–––
126
335
416
1.3
25
68
24
34
†
V/°C
µA
nA
nC
pF
nC
ns
W
V
V
S
V
Reference to 25°C, I
ƒ = 1.0MHz, See Fig. 5…
V
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
and center of die contact
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs „…
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
=62A
=54A
= 25°C, I
= 25°C, I
= 3.6Ω , V
= 0.4Ω, See Fig. 10 „…
= V
= 25V, I
=40V, V
= 32V, V
= 16V
= 32V
= 0V
= 25V
= 0V, I
= 10V, I
= 4.5V, I
= -16V
= 4.5V, See Fig. 6 and 13 „…
= 20V
GS
, I
D
S
F
D
D
D
GS
= 250µA
D
GS
Conditions
=62A, V
=62A
GS
= 250µA
= 62A „
= 62A…
= 52A „
= 0V
= 0V, T
= 4.5V
D
www.irf.com
GS
=1mA…
J
= 0V „
= 150°C
G
S
+L
S
D
D
)