STP8NS25FP STMicroelectronics, STP8NS25FP Datasheet

MOSFET N-CH 250V 8A TO-220FP

STP8NS25FP

Manufacturer Part Number
STP8NS25FP
Description
MOSFET N-CH 250V 8A TO-220FP
Manufacturer
STMicroelectronics
Series
MESH OVERLAY™r
Datasheet

Specifications of STP8NS25FP

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
450 mOhm @ 4A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
51.8nC @ 10V
Input Capacitance (ciss) @ Vds
770pF @ 25V
Power - Max
30W
Mounting Type
Through Hole
Package / Case
TO-220FP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STP8NS25FP
Manufacturer:
ST
Quantity:
131
Part Number:
STP8NS25FP
Manufacturer:
ST
0
Part Number:
STP8NS25FP
Manufacturer:
ST
Quantity:
20 000
Part Number:
STP8NS25FP,8NS25FP
Manufacturer:
ST
0
Part Number:
STP8NS25FP,P8NS25FP
Manufacturer:
ST
0
Part Number:
STP8NS25FP,STP8NS25
Manufacturer:
ST
0
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performance. The new patented STrip layout cou-
pled with the Company’s proprietary edge termina-
tion structure, makes it suitable in coverters for
lighting applications.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
April 2001
STP8NS25
STP8NS25FP
TYPICAL R
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
HIGH CURRENT, HIGH SPEED SWITCHING
SWITH MODE POWER SUPPLIES (SMPS)
DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
dv/dt (1)
Symbol
I
V
DM
P
V
V
V
T
DGR
I
I
TOT
T
ISO
stg
DS
GS
D
D
TYPE
j
( )
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuos) at T
Drain Current (continuos) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
DS
(on) = 0.38
250 V
250 V
N-CHANNEL 250V - 0.38 - 8A TO-220/TO-220FP
V
DSS
< 0.45
< 0.45
R
DS(on)
C
GS
Parameter
= 25°C
GS
= 20 k )
= 0)
C
C
= 25°C
= 100°C
8 A
8 A
I
D
(1) I
(*)Limited only by maximum temperature allowed
MESH OVERLAY™ MOSFET
SD
INTERNAL SCHEMATIC DIAGRAM
8A, di/dt 300 A/ s, V
TO-220
STP8NS25
0.64
32
80
8
5
-
1
–65 to 150
2
STP8NS25FP
DD
3
Value
± 20
250
250
150
V
5
(BR)DSS
STP8NS25
STP8NS25FP
, Tj T
TO-220FP
32(*)
2000
0.24
8(*)
5(*)
30
jMAX
1
2
W/°C
V/ns
Unit
°C
°C
W
V
V
V
A
A
A
V
3
1/9

Related parts for STP8NS25FP

STP8NS25FP Summary of contents

Page 1

... MESH OVERLAY™ MOSFET R I DS(on) D < 0. < 0. Parameter = 25° 100° 25° (*)Limited only by maximum temperature allowed STP8NS25 STP8NS25FP TO-220 TO-220FP INTERNAL SCHEMATIC DIAGRAM Value STP8NS25 STP8NS25FP 250 250 ± 8(*) 5 5(*) 32 32(*) 80 30 0.64 0. 2000 –65 to 150 150 8A, di/dt 300 (BR)DSS Unit ...

Page 2

... STP8NS25/STP8NS25FP THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max Rthc-sink Thermal Resistance Case-sink Typ T Maximum Lead Temperature For Soldering Purpose l ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter V Drain-source (BR)DSS Breakdown Voltage I DSS Zero Gate Voltage ...

Page 3

... Figure 200V clamp 4 10V G GS (see test circuit, Figure 5) Test Conditions di/dt = 100A/µ 30V 150° (see test circuit, Figure 5) Safe Operating Area for TO-220FP STP8NS25/STP8NS25FP Min. Typ. Max. Unit 51.8 nC 5.2 nC 14.8 nC Min. Typ. Max. Unit 12 Min ...

Page 4

... STP8NS25/STP8NS25FP Thermal Impedence for TO-220 Output Characteristics Transconductance 4/9 Thermal Impedence for TO-220FP Transfer Characteristics Static Drain-source On Resistance ...

Page 5

... Gate Charge vs Gate-source Voltage Normalized Gate Thereshold Voltage vs Temp. Source-drain Diode Forward Characteristics STP8NS25/STP8NS25FP Capacitance Variations Normalized On Resistance vs Temperature 5/9 ...

Page 6

... STP8NS25/STP8NS25FP Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 7

... STP8NS25/STP8NS25FP inch TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.151 P011C ...

Page 8

... STP8NS25/STP8NS25FP DIM. MIN. A 4.4 B 2.5 D 2.5 E 0.45 F 0.75 F1 1.15 F2 1.15 G 4. 28.6 L4 9 Ø 3 ¯ 8/9 TO-220FP MECHANICAL DATA mm TYP. MAX. MIN. 4.6 0.173 2.7 0.098 2.75 0.098 0.7 0.017 1 0.030 1.7 0.045 1.7 0.045 5.2 0.195 2.7 0.094 10 ...

Page 9

... The ST logo is a trademark of STMicroelectronics © 2001 STMicroelectronics – Printed in Italy – All Rights Reserved Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. STMicroelectronics GROUP OF COMPANIES http://www.st.com STP8NS25/STP8NS25FP 9/9 ...

Related keywords