STB80NF55-08T4 STMicroelectronics, STB80NF55-08T4 Datasheet - Page 6
STB80NF55-08T4
Manufacturer Part Number
STB80NF55-08T4
Description
MOSFET N-CH 55V 80A D2PAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Specifications of STB80NF55-08T4
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
155nC @ 10V
Input Capacitance (ciss) @ Vds
3850pF @ 25V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.008 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
40 S
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
80 A
Power Dissipation
300000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
80A
Drain Source Voltage Vds
55V
On Resistance Rds(on)
8mohm
Rds(on) Test Voltage Vgs
16V
Threshold Voltage Vgs Typ
3V
Transistor Case Style
D2-PAK
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3737-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
STB80NF55-08/-1 STP80NF55-08
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For Resistive
Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/11
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit