IRL8113SPBF International Rectifier, IRL8113SPBF Datasheet - Page 13

• Manufacturer Part Number: IRL8113SPBF
• Description: MOSFET N-CH 30V 105A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL8113SPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 mOhm @ 21A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 105A
• Vgs(th) (max) @ Id: 2.25V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2840pF @ 15V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 105A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 6mohm
• Rds(on) Test Voltage Vgs: 10V
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 7.1 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 105 A
• Power Dissipation: 110 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 23 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRL8113SPBF

Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/