IRL8113SPBF International Rectifier, IRL8113SPBF Datasheet - Page 3

• Manufacturer Part Number: IRL8113SPBF
• Description: MOSFET N-CH 30V 105A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL8113SPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 mOhm @ 21A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 105A
• Vgs(th) (max) @ Id: 2.25V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2840pF @ 15V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 105A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 6mohm
• Rds(on) Test Voltage Vgs: 10V
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 7.1 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 105 A
• Power Dissipation: 110 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 23 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRL8113SPBF

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1000
1000
Fig 3. Typical Transfer Characteristics
100
Fig 1. Typical Output Characteristics
100
10
10
1
0.1
1.0
T J = 175°C
TOP
BOTTOM
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
2.0
VGS
10V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
3.0V
3.0
T J = 25°C
V DS = 10V
≤ 60µs PULSE WIDTH
4.0
≤ 60µs PULSE WIDTH
Tj = 25°C
1
3.0V
5.0
6.0
7.0
10
2.0
1.5
1.0
0.5
1000
100
10
-60 -40 -20 0
Fig 4. Normalized On-Resistance
Fig 2. Typical Output Characteristics
0.1
I D = 42A
V GS = 10V
TOP
BOTTOM
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
vs. Temperature
VGS
10V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
3.0V
20 40 60 80 100 120 140 160 180
≤ 60µs PULSE WIDTH
Tj = 175°C
1
3.0V
3
10