IRF1010NSPBF International Rectifier, IRF1010NSPBF Datasheet - Page 3

• Manufacturer Part Number: IRF1010NSPBF
• Description: MOSFET N-CH 55V 85A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF1010NSPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11 mOhm @ 43A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 85A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Input Capacitance (ciss) @ Vds: 3210pF @ 25V
• Power - Max: 180W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.011Ohm
• Drain-source On-volt: 55V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 85A
• Power Dissipation: 180W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: D2PAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF1010NSPBF

www.irf.com
1000
100
100
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
10
10
1
1
0.1
4
TOP
BOTTOM
V
V
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
GS
, Drain-to-Source Voltage (V)
6
, Gate-to-Source Voltage (V)
T = 25 C
1
J
°
8
4.5V
20µs PULSE WIDTH
T = 25 C
V
20µs PULSE WIDTH
J
DS
10
= 25V
T = 175 C
J
°
10
°
100
12
1000
100
Fig 2. Typical Output Characteristics
10
2.5
2.0
1.5
1.0
0.5
0.0
1
0.1
-60 -40 -20 0
Fig 4. Normalized On-Resistance
TOP
BOTTOM
I =
D
V
85A
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
T , Junction Temperature ( C)
J
Vs. Temperature
, Drain-to-Source Voltage (V)
20 40 60 80 100 120 140 160 180
1
4.5V
20µs PULSE WIDTH
T = 175 C
J
10
°
V
°
GS
=
10V
3
100