IRF1010NSPBF International Rectifier, IRF1010NSPBF Datasheet - Page 4

• Manufacturer Part Number: IRF1010NSPBF
• Description: MOSFET N-CH 55V 85A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF1010NSPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11 mOhm @ 43A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 85A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Input Capacitance (ciss) @ Vds: 3210pF @ 25V
• Power - Max: 180W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.011Ohm
• Drain-source On-volt: 55V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 85A
• Power Dissipation: 180W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: D2PAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF1010NSPBF

4
6000
5000
4000
3000
2000
1000
1000
100
0.1
10
0
1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
0.0
1
Drain-to-Source Voltage
T = 175 C
J
Ciss
Coss
V
Crss
V DS , Drain-to-Source Voltage (V)
SD
Forward Voltage
0.6
,Source-to-Drain Voltage (V)
°
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
T = 25 C
J
1.2
10
°
f = 1 MHZ
1.8
V
GS
SHORTED
= 0 V
2.4
100
1000
100
10
1
1
20
16
12
Fig 8. Maximum Safe Operating Area
8
4
0
Tc = 25°C
Tj = 175°C
Single Pulse
0
Fig 6. Typical Gate Charge Vs.
I =
D
V DS , Drain-toSource Voltage (V)
43A
Gate-to-Source Voltage
20
Q , Total Gate Charge (nC)
G
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
40
V
V
V
DS
DS
DS
60
1msec
100
10msec
100µsec
= 44V
= 27V
= 11V
FOR TEST CIRCUIT
SEE FIGURE
www.irf.com
80
100
1000
13
120