IRF2807STRRPBF International Rectifier, IRF2807STRRPBF Datasheet

IRF2807STRRPBF

Manufacturer Part Number

IRF2807STRRPBF

Description

MOSFET N-CH 75V 82A D2PAK

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheets

1.IRF2807STRLPBF.pdf (11 pages)

2.IRF2807S.pdf (11 pages)

3.IRF2807STRRPBF.pdf (4 pages)

Specifications of IRF2807STRRPBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

13 mOhm @ 43A, 10V

Drain To Source Voltage (vdss)

75V

Current - Continuous Drain (id) @ 25° C

82A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

160nC @ 10V

Input Capacitance (ciss) @ Vds

3820pF @ 25V

Power - Max

230W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Current, Drain

82 A

Gate Charge, Total

160 nC

Package Type

D2Pak

Polarization

N-Channel

Power Dissipation

230 W

Resistance, Drain To Source On

13 Milliohms

Temperature, Operating, Maximum

+175 °C

Temperature, Operating, Minimum

-55 °C

Time, Turn-off Delay

49 ns

Time, Turn-on Delay

13 ns

Transconductance, Forward

38 S

Voltage, Breakdown, Drain To Source

75 V

Voltage, Forward, Diode

1.2 V

Voltage, Gate To Source

±20 V

Transistor Polarity

N Channel

Continuous Drain Current Id

82A

Drain Source Voltage Vds

75V

On Resistance Rds(on)

13mohm

Rds(on) Test Voltage Vgs

10V

Peak Reflow Compatible (260 C)

Yes

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

BOSTOCK HK LIMITED

Part Number:

IRF2807STRRPBF

Manufacturer:

Quantity:

8 000

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Thermal Resistance

Absolute Maximum Ratings

www.irf.com

Description

Advanced HEXFET

Rectifier utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

The D

accommodating die sizes up to HEX-4. It provides the highest

power capability and the lowest possible on-resistance in any

existing surface mount package. The D

high current applications because of its low internal connection

resistance and can dissipate up to 2.0W in a typical surface

mount application.

The through-hole version (IRF2807L) is available for low-

profile applications.

dv/dt

STG

@ T

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Pak is a surface mount power package capable of

= 25°C

= 100°C

= 25°C

Junction-to-Case

Junction-to-Ambient (PCB mount)**

Peak Diode Recovery dv/dt

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Avalanche Current

Repetitive Avalanche Energy

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

Power MOSFETs from International

Parameter

Pak is suitable for

@ 10V

Typ.

300 (1.6mm from case )

–––

10 lbf•in (1.1N•m)

HEXFET

-55 to + 175

IRF2807S

Max.

280

230

± 20

1.5

5.9

Pak

‡

IRF2807S

IRF2807L

Power MOSFET

Max.

DS(on)

0.65

DSS

= 82A‡

IRF2807L

TO-262

PD - 94170

= 75V

= 13m

Units

°C/W

W/°C

V/ns

°C

02/14/02

Related parts for IRF2807STRRPBF

IRF2807STRRPBF Summary of contents

Page 1

Advanced Process Technology l Ultra Low On-Resistance l l Dynamic dv/dt Rating 175°C Operating Temperature l l Fast Switching Fully Avalanche Rated l Description ® Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low ...

Page 2

IRF2807S/IRF2807L Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

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IRF2807STRRPBF International Rectifier, IRF2807STRRPBF Datasheet

IRF2807STRRPBF

Specifications of IRF2807STRRPBF

Available stocks

Related parts for IRF2807STRRPBF

IRF2807STRRPBF Summary of contents

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