STP36NF06L STMicroelectronics, STP36NF06L Datasheet

MOSFET N-CH 60V 30A TO-220

STP36NF06L

Manufacturer Part Number
STP36NF06L
Description
MOSFET N-CH 60V 30A TO-220
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheets

Specifications of STP36NF06L

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
40 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 5V
Input Capacitance (ciss) @ Vds
660pF @ 25V
Power - Max
70W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.04 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
15 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 18 V
Continuous Drain Current
30 A
Power Dissipation
70000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
30A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
40mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2.5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-7522-5
STP36NF06L

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STP36NF06L
Manufacturer:
STMicroelectronics
Quantity:
2 300
Part Number:
STP36NF06L
Manufacturer:
ST
Quantity:
20 000
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps
reproducibility.
APPLICATIONS
Ordering Information
ABSOLUTE MAXIMUM RATINGS
(
June 2003
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
STB36NF06L
STP36NF06L
STB36NF06L
STP36NF06L
TYPICAL R
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
SURFACE-MOUNTING D²PAK (TO-263)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
POWER TOOLS
AUTOMOTIVE ENVIRONMENT
Pulse width limited by safe operating area.
Symbol
dv/dt
E
I
V
DM
V
V
P
T
AS (2)
DGR
I
I
T
GS
stg
DS
TYPE
D
D
tot
(
j
SALES TYPE
(1)
therefore
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
Operating Junction Temperature
DS
(on) = 0.032
a
V
60 V
60 V
DSS
N-CHANNEL 60V - 0.032
remarkable
Parameter
< 0.040
< 0.040
R
DS(on)
C
GS
= 25°C
GS
= 20 k )
STB36NF06L
STP36NF06L
manufacturing
MARKING
= 0)
C
C
30 A
30 A
= 25°C
= 100°C
I
D
STripFET™ II POWER MOSFET
INTERNAL SCHEMATIC DIAGRAM
(1) I
(2) Starting T
SD
30A, di/dt 200A/µs, V
PACKAGE
TO-263
TO-220
(Suffix “T4”)
j
= 25
TO-263
D
2
-55 to 175
PAK
o
Value
- 30A D²PAK/TO-220
C, I
± 18
0.47
120
235
60
60
30
21
70
10
1
D
= 15A, V
3
STB36NF06L
STP36NF06L
DD
DD
V
(BR)DSS
= 30V
PRELIMINARY DATA
TAPE & REEL
PACKAGING
, T
TUBE
TO-220
j
T
JMAX
W/°C
V/ns
1
Unit
mJ
°C
W
V
V
V
A
A
A
2
3
1/8

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STP36NF06L Summary of contents

Page 1

... STripFET™ II POWER MOSFET R I DS(on INTERNAL SCHEMATIC DIAGRAM manufacturing MARKING STB36NF06L STP36NF06L = 25° 100° 25° (2) Starting T STB36NF06L STP36NF06L - 30A D²PAK/TO-220 PRELIMINARY DATA PAK TO-263 (Suffix “T4”) TO-220 PACKAGE PACKAGING TO-263 TAPE & REEL TO-220 TUBE Value 60 60 ± 120 70 0.47 ...

Page 2

... STB36NF06L STP36NF06L THERMAL DATA Thermal Resistance Junction-case Rthj-case Thermal Resistance Junction-ambient Rthj-amb Maximum Lead Temperature For Soldering Purpose T l (1.6 mm from case, for 10 sec) ELECTRICAL CHARACTERISTICS (T OFF Symbol Parameter Drain-source V (BR)DSS Breakdown Voltage Zero Gate Voltage I DSS Drain Current (V GS Gate-body Leakage ...

Page 3

... STB36NF06L STP36NF06L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Turn-on Delay Time t d(on) Rise Time Total Gate Charge g Q Gate-Source Charge gs Gate-Drain Charge Q gd SWITCHING OFF Symbol Parameter t Turn-off Delay Time d(off) Fall Time t f SOURCE DRAIN DIODE Symbol Parameter I Source-drain Current ...

Page 4

... STB36NF06L STP36NF06L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/8 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 5

... STB36NF06L STP36NF06L DIM. MIN. A 4.4 A1 2.49 A2 0.03 B 0.7 B2 1.14 C 0.45 C2 1. 1.27 L3 1 0° PAK MECHANICAL DATA mm. TYP. MAX. MIN. 4.6 0.173 2.69 0.098 0.23 0.001 0.93 0.028 1.7 0.045 0.6 0.018 1.36 0.048 9.35 0.352 8 10.4 0.394 8.5 5 ...

Page 6

... STB36NF06L STP36NF06L DIM. MIN. A 4.4 C 1.23 D 2.40 E 0.49 F 0.61 F1 1.14 F2 1.14 G 4. 2.65 L6 15.25 L7 6.20 L9 3.50 DIA 3.75 6/8 TO-220 MECHANICAL DATA mm. TYP. MAX. 4.6 0.173 1.32 0.048 2.72 0.094 0.70 0.019 0.88 0.024 1.70 0.044 1.70 0.044 5.15 0.194 2 ...

Page 7

... STB36NF06L STP36NF06L 2 D PAK FOOTPRINT TAPE AND REEL SHIPMENT (suffix ”T4”)* TAPE MECHANICAL DATA mm DIM. MIN. MAX. MIN. A0 10.5 10.7 0.413 B0 15.7 15.9 0.618 D 1.5 1.6 0.059 D1 1.59 1.61 0.062 E 1.65 1.85 0.065 F 11.4 11.6 0.449 K0 4.8 5.0 0.189 P0 3.9 4 ...

Page 8

... STB36NF06L STP36NF06L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

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