STB14NM50N STMicroelectronics, STB14NM50N Datasheet - Page 17
STB14NM50N
Manufacturer Part Number
STB14NM50N
Description
MOSFET N-CH 500V 12A D2PAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Specifications of STB14NM50N
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
320 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
4V @ 100µA
Gate Charge (qg) @ Vgs
27nC @ 10V
Input Capacitance (ciss) @ Vds
816pF @ 50V
Power - Max
90W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Dual
Transistor Polarity
Dual N-Channel
Resistance Drain-source Rds (on)
0.9 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
2 V
Continuous Drain Current
12 A
Power Dissipation
90 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Gate Charge Qg
42 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10644-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
STB14NM50N, STD14NM50N, STF14NM50N, STP14NM50N
Package mechanical data
Figure 25. DPAK (TO-252) drawing
0068772_G
Doc ID 16832 Rev 4
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