IXTP50N25T IXYS, IXTP50N25T Datasheet

no-image

IXTP50N25T

Manufacturer Part Number
IXTP50N25T
Description
MOSFET N-CH 250V 50A TO-220
Manufacturer
IXYS
Datasheet

Specifications of IXTP50N25T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
60 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
5V @ 1mA
Gate Charge (qg) @ Vgs
78nC @ 10V
Input Capacitance (ciss) @ Vds
4000pF @ 25V
Power - Max
400W
Mounting Type
Through Hole
Package / Case
TO-220
Vdss, Max, (v)
250
Id(cont), Tc=25°c, (a)
50
Rds(on), Max, Tj=25°c, (?)
0.06
Ciss, Typ, (pf)
4000
Qg, Typ, (nc)
78
Trr, Typ, (ns)
166
Trr, Max, (ns)
-
Pd, (w)
400
Rthjc, Max, (k/w)
0.31
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTP50N25T
Manufacturer:
NXP
Quantity:
12 000
Part Number:
IXTP50N25T
0
Trench Gate
Power MOSFET
N-Channel Enhancement Mode
Symbol
V
V
V
I
I
I
E
P
T
T
T
T
M
F
Weight
Symbol
(T
BV
V
I
I
R
© 2007 IXYS CORPORATION, All rights reserved
D25
DM
AS
GSS
DSS
J
JM
stg
L
C
DSS
DGR
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C unless otherwise specified)
Test Conditions
T
T
Transient
T
T
T
T
T
1.6mm (0.062in.) from case for 10s
Plastic body for 10 seconds
Mounting Torque TO-220,TO-3P,TO247
Mounting Force TO-263
V
V
V
V
V
V
Test Conditions
TO-263 (IXTA)
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
= 0V, I
= V
= ± 20V, V
= V
= 0V
= 10V, I
GS
DSS
, I
D
D
G
D
= 1mA
= 1mA
= 0.5 • I
DS
S
= 0V
D25
GS
, Note 1
(TAB)
TO-263
TO-220
TO-3P
TO-247
= 1MΩ
Preliminary Technical Information
T
IXTA50N25T IXTH50N25T
IXTP50N25T IXTQ50N25T
J
= 125°C
JM
10..65 / 2.2..14.6
TO-247 (IXTH)
Characteristic Values
G
-55 ... +150
-55 ... +150
D
250
Min.
Maximum Ratings
1.13 / 10
S
3
± 30
250
250
130
400
150
300
260
Typ .
1.5
2.5
3.0
5.5
6.0
50
5
± 100 nA
Max.
(TAB)
150 μA
Nmlb.in.
50 mΩ
5
1 μA
N/lb.
°C
°C
°C
°C
°C
W
V
V
V
A
A
A
V
V
g
g
g
g
J
V
I
R
G = Gate
S = Source
Features
Advantages
Applications
D25
Avalanche rated
International standard packages
Low package inductance
- easy to drive and to protect
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Uninterruptible power supplies
High speed power switching
applications
Easy to mount
Space savings
High power density
DS(on)
DSS
TO-220 (IXTP)
TO-3P (IXTQ)
G
D
=
=
≤ ≤ ≤ ≤ ≤
G
S
D S
D = Drain
TAB = Drain
250V
50A
50mΩ Ω Ω Ω Ω
DS99346A(10/07)
(TAB)
(TAB)

Related parts for IXTP50N25T

IXTP50N25T Summary of contents

Page 1

... GSS DSS DS DSS 10V 0.5 • I DS(on © 2007 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXTA50N25T IXTH50N25T IXTP50N25T IXTQ50N25T TO-247 (IXTH (TAB) S Maximum Ratings 250 = 1MΩ 250 GS ± 130 JM 5 1.5 400 -55 ... +150 150 -55 ... +150 300 260 1. 10..65 / 2.2..14.6 TO-263 2 ...

Page 2

... I = 0.5 • DSS D D25 22 0.50 0.25 Characteristic Values Min. Typ. JM 166 23 1.9 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTA50N25T IXTH50N25T IXTP50N25T IXTQ50N25T Max °C/W 0.31 °C/W °C/W Max 200 A 1 μC 6,404,065 B1 6,683,344 6,727,585 ...

Page 3

... L 19.81 20.32 .780 .800 L1 4.50 .177 ∅P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC IXTA50N25T IXTH50N25T IXTP50N25T IXTQ50N25T TO-220 (IXTP) Outline Pins Gate 2 - Drain 3 - Source 4 - Drain TO-3P (IXTQ) Outline ...

Page 4

... GS 8V 140 7V 120 100 6V 5V 1.4 1.6 1 10V 3 25A Value 125º 25º 100 120 140 IXTA50N25T IXTH50N25T IXTP50N25T IXTQ50N25T Fig. 2. Extended Output Characteristics @ 25º 10V Volts DS Fig Normalized to I DS(on) vs. Junction Temperature 3 10V GS 2.8 2 50A 2 D 1.6 1 ...

Page 5

... V - Volts DS © 2007 IXYS CORPORATION, All rights reserved 100 5.2 5 25ºC J 0.9 1 1.1 1.2 1.00 C iss 0.10 C oss C rss 0. 0.00001 IXTA50N25T IXTH50N25T IXTP50N25T IXTQ50N25T Fig. 8. Transconductance 40º Amperes D Fig. 10. Gate Charge 125V 25A 10mA NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance 0 ...

Page 6

... T = 25º 125º IXTA50N25T IXTH50N25T IXTP50N25T IXTQ50N25T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current T = 25º 3.3 Ω 15V 125V 125º Amperes D Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature d(off) = 3.3 Ω 125V 25A 50A Degrees Centigrade J Fig. 18. Resistive Turn-off Switching Times vs ...

Related keywords