STP17NK40Z STMicroelectronics, STP17NK40Z Datasheet

MOSFET N-CH 400V 15A TO-220

STP17NK40Z

Manufacturer Part Number
STP17NK40Z
Description
MOSFET N-CH 400V 15A TO-220
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet

Specifications of STP17NK40Z

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
250 mOhm @ 7.5A, 10V
Drain To Source Voltage (vdss)
400V
Current - Continuous Drain (id) @ 25° C
15A
Vgs(th) (max) @ Id
4.5V @ 100µA
Gate Charge (qg) @ Vgs
65nC @ 10V
Input Capacitance (ciss) @ Vds
1900pF @ 25V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
7.5A
Drain Source Voltage Vds
400V
On Resistance Rds(on)
230mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3.75V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.25 Ohms
Forward Transconductance Gfs (max / Min)
10.6 S
Drain-source Breakdown Voltage
400 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
15 A
Power Dissipation
150 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STP17NK40Z
Manufacturer:
ST
Quantity:
12 500
Part Number:
STP17NK40Z
Manufacturer:
ST
0
Part Number:
STP17NK40Z,17NK40Z
Manufacturer:
ST
0
Part Number:
STP17NK40ZFP
Manufacturer:
ST
Quantity:
35 000
Part Number:
STP17NK40ZFP
Manufacturer:
IR
Quantity:
2 000
Part Number:
STP17NK40ZFP
Manufacturer:
ST
0
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS
ORDERING INFORMATION
October 2002
STP17NK40Z
STP17NK40ZFP
TYPICAL R
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING
REPEATIBILITY
HIGH CURRENT, HIGH SPEED SWITCHING
IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
LIGHTING
STP17NK40ZFP
TYPE
SALES TYPE
STP17NK40Z
DS
(on) = 0.23
N-CHANNEL 400V - 0.23 - 15A TO-220/TO-220FP
400 V
400 V
V
DSS
Zener-Protected SuperMESH™Power MOSFET
< 0.25
< 0.25
R
DS(on)
P17NK40ZFP
P17NK40Z
MARKING
15 A
15 A
STP17NK40Z - STP17NK40ZFP
I
D
150 W
35 W
Pw
PACKAGE
TO-220FP
TO-220
INTERNAL SCHEMATIC DIAGRAM
TO-220
PACKAGING
TUBE
TUBE
TO-220FP
1
2
3
1/10

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STP17NK40Z Summary of contents

Page 1

... ST full range of high voltage MOSFETs in- cluding revolutionary MDmesh™ products. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC LIGHTING ORDERING INFORMATION SALES TYPE STP17NK40Z STP17NK40ZFP October 2002 STP17NK40Z - STP17NK40ZFP 150 INTERNAL SCHEMATIC DIAGRAM MARKING PACKAGE P17NK40Z ...

Page 2

... STP17NK40Z - STP17NK40ZFP ABSOLUTE MAXIMUM RATINGS Symbol Parameter V Drain-source Voltage ( Drain-gate Voltage (R DGR V Gate- source Voltage GS I Drain Current (continuous Drain Current (continuous Drain Current (pulsed Total Dissipation at T TOT Derating Factor I Gate-source Current (DC Gate source ESD(HBM-C=100pF, R=1.5K ESD(G-S) dv/dt (1) Peak Diode Recovery voltage slope ...

Page 3

... Load see, Figure 320 4 (Inductive Load see, Figure 5) Test Conditions di/dt = 100 A/µ 100 150° (see test circuit, Figure 5) STP17NK40Z - STP17NK40ZFP Min. Typ. Max. 400 = 125 °C 50 ±10 3 3.75 4.5 0.23 0.25 Min. Typ. Max. 10 1900 GS 271 63 175 Min. Typ. Max ...

Page 4

... STP17NK40Z - STP17NK40ZFP Safe Operating Area For TO-220 Thermal Impedance For TO-220 Output Characteristics 4/10 Safe Operating Area For TO-220FP Thermal Impedance For TO-220FP Transfer Characteristics ...

Page 5

... Transconductance Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temp. STP17NK40Z - STP17NK40ZFP Static Drain-source On Resistance Capacitance Variations Normalized On Resistance vs Temperature 5/10 ...

Page 6

... STP17NK40Z - STP17NK40ZFP Source-drain Diode Forward Characteristics Maximum Avalanche Energy vs Temperature 6/10 Normalized BVDSS vs Temperature ...

Page 7

... Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times STP17NK40Z - STP17NK40ZFP Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit 7/10 ...

Page 8

... STP17NK40Z - STP17NK40ZFP DIM. MIN. A 4.40 C 1. 0.49 F 0.61 F1 1.14 F2 1.14 G 4.95 G1 2 13.0 L5 2.65 L6 15.25 L7 6.2 L9 3.5 DIA. 3.75 8/10 TO-220 MECHANICAL DATA mm TYP. MAX. 4.60 1.32 2.72 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 16.4 14.0 2.95 15 ...

Page 9

... STP17NK40Z - STP17NK40ZFP inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 0.630 1.204 0.417 0.141 0.645 0.366 0.126 ...

Page 10

... STP17NK40Z - STP17NK40ZFP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

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