IXTP50N20P IXYS, IXTP50N20P Datasheet - Page 5

• Manufacturer Part Number: IXTP50N20P
• Description: MOSFET N-CH 200V 50A TO-220
• Manufacturer: IXYS
• Series: PolarHT™r

Specifications of IXTP50N20P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 60 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 70nC @ 10V
• Input Capacitance (ciss) @ Vds: 2720pF @ 25V
• Power - Max: 360W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.06 Ohms
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 360 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 200
• Id(cont), Tc=25°c, (a): 50
• Rds(on), Max, Tj=25°c, (?): 0.06
• Ciss, Typ, (pf): 2720
• Qg, Typ, (nc): 70
• Trr, Typ, (ns): 150
• Pd, (w): 360
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXTA50N20P IXTP50N20P
IXTQ50N20P
Fig. 13. Maximum Transient Thermal Impedance
1.00
0.10
0.01
0.1
1
10
100
1000
Pulse Width - milliseconds
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IXYS REF: T_50N20P(5S)7-31-08-F