IRFB61N15DPBF International Rectifier, IRFB61N15DPBF Datasheet - Page 2

• Manufacturer Part Number: IRFB61N15DPBF
• Description: MOSFET N-CH 150V 60A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB61N15DPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 32 mOhm @ 36A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 140nC @ 10V
• Input Capacitance (ciss) @ Vds: 3470pF @ 25V
• Power - Max: 2.4W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Channel Type: N
• Current, Drain: 60 A
• Gate Charge, Total: 95 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 330 W
• Resistance, Drain To Source On: 0.032 Ohm
• Resistance, Thermal, Junction To Case: 0.45 °C/W
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 28 ns
• Time, Turn-on Delay: 18 ns
• Transconductance, Forward: 22 S
• Voltage, Breakdown, Drain To Source: 150 V
• Voltage, Drain To Source: 150 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±30 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFB61N15DPBF

Diode Characteristics
IRFB61N15DPbF
Avalanche Characteristics
Dynamic @ T
Static @ T
E
I
E
R
I
V
∆V
V
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
I
I
V
t
Q
t
I
AR
GSS
SM
DSS
d(on)
d(off)
S
rr
on
r
f
2
fs
AS
AR
(BR)DSS
DS(on)
GS(th)
SD
iss
oss
rss
oss
oss
oss
rr
g
gs
gd
(BR)DSS
eff.
/∆T
J
Breakdown Voltage Temp. Coefficient
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
J
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
–––
150
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
3.0
Min. Typ. Max. Units
–––
–––
–––
–––
––– 1340 2010
22
Intrinsic turn-on time is negligible (turn-on is dominated by L
0.18 –––
3470 –––
4600 –––
–––
–––
–––
–––
–––
––– -100
–––
110
690
150
310
580
–––
–––
–––
180
––– 0.032
95
26
45
18
28
51
250
270
–––
250
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.3
5.5
25
140
39
68
60
V/°C
nC
µA
nA
nC
ns
pF
ns
V
Ω
V
S
V
Typ.
–––
–––
–––
Reference to 25°C, I
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs „
V
V
V
V
V
V
V
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
V
D
I
J
J
GS
GS
DS
DS
DS
GS
GS
DS
D
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
= 37A
= 25°C, I
= 25°C, I
= 37A
= 1.8Ω
= 50V, I
= 120V
= 25V
= 0V, I
= 10V, I
= V
= 150V, V
= 120V, V
= 30V
= -30V
= 10V,
= 75V
= 10V „
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
S
F
DS
D
D
D
Conditions
DS
DS
= 250µA
Conditions
Conditions
= 37A, V
= 37A
= 250µA
= 36A
= 37A
GS
GS
= 0V to 120V …
Max.
= 1.0V, ƒ = 1.0MHz
= 120V, ƒ = 1.0MHz
520
37
33
= 0V
= 0V, T
D
www.irf.com
= 1mA
GS
„
J
= 0V „
G
= 150°C
Units
S
+L
mJ
mJ
A
D
D
S
)