IRF7799L2TR1PBF International Rectifier, IRF7799L2TR1PBF Datasheet

MOSFET N-CH 250V 375A DIRECTFET

IRF7799L2TR1PBF

Manufacturer Part Number
IRF7799L2TR1PBF
Description
MOSFET N-CH 250V 375A DIRECTFET
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7799L2TRPBF.pdf (11 pages)

Specifications of IRF7799L2TR1PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
38 mOhm @ 21A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
375A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
165nC @ 10V
Input Capacitance (ciss) @ Vds
6714pF @ 25V
Power - Max
4.3W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric L8
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
35 A
Power Dissipation
125 W
Gate Charge Qg
110 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7799L2TR1PBFTR
l
l
l
l
l
l
l
l
l
l

‚
ƒ
Applicable DirectFET Outline and Substrate Outline 
Description
The IRF7799L2TR/TR1PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
achieve the lowest on-state resistance in a package that has a footprint smaller than a D
is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package
allows dual sided cooling to maximize thermal transfer in power systems.
The IRF7799L2TR/TR1PbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses
in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system
reliability improvements, and makes this device ideal for high performance power converters.
www.irf.com
Absolute Maximum Ratings
V
V
I
I
I
I
I
E
I
D
D
D
D
DM
AR
DS
GS
AS
Primary Switch Socket
RoHS Compliant, Halogen Free 
Lead-Free (Qualified up to 260°C Reflow)
Ideal for High Performance Isolated Converter
Optimized for Synchronous Rectification
Low Conduction Losses
High Cdv/dt Immunity
Low Profile (<0.7mm)
Dual Sided Cooling Compatible 
Compatible with existing Surface Mount Techniques 
Industrial Qualified
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
@ T
@ T
@ T
@ T
SB
C
C
A
C
= 25°C
= 25°C
= 100°C
= 25°C
Fig 1. Typical On-Resistance vs. Gate Voltage
200
180
160
140
120
100
80
60
40
20
SC
4
V GS, Gate -to -Source Voltage (V)
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
8
12
T J = 125°C
T J = 25°C
Ã
16
I D = 21A
Parameter
GS
GS
GS
GS
20
@ 10V
@ 10V
@ 10V
@ 10V
M2
h
(Silicon Limited)
(Silicon Limited)
(Silicon Limited)
(Package Limited)
M4
„
…
†
‡
T
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
Pulse width ≤ 400µs; duty cycle ≤ 2%.
C
e
measured with thermocouple mounted to top (Drain) of part.
60
55
50
45
40
35
30
25
J
= 25°C, L = 1.42mH, R
0
2
Fig 2. Typical On-Resistance vs. Drain Current
PAK and only 0.7 mm profile. The DirectFET package
D
Vgs = 7.0V
Vgs = 8.0V
Vgs = 10V
Vgs = 15V
250V min ± 30V max
20
G
DirectFET™ Power MOSFET ‚
Q
110nC
L4
V
L8
I D , Drain Current (A)
S
S
S
S
g tot
DSS
IRF7799L2TR1PbF
40
IRF7799L2TRPbF
S
S
S
S
Max.
250
375
140
325
±30
6.6
35
25
21
60
D
L6
G
39nC
V
Q
= 25Ω, I
T J = 25°C
GS
gd
80
DirectFET™ ISOMETRIC
AS
100
L8
= 21A.
32mΩ@ 10V
TM
R
V
4.0V
packaging to
DS(on)
gs(th)
Units
mJ
08/31/09
V
A
A
1

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IRF7799L2TR1PBF Summary of contents

Page 1

... C … Repetitive rating; pulse width limited by max. junction temperature. † Starting T = 25° 1.42mH ‡ Pulse width ≤ 400µs; duty cycle ≤ 2%. IRF7799L2TRPbF IRF7799L2TR1PbF DirectFET™ Power MOSFET ‚ DSS GS DS(on) 250V min ± 30V max 32mΩ@ 10V Q ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th) ...

Page 3

Absolute Maximum Ratings 25°C Power Dissipation 100°C Power Dissipation 25°C Power Dissipation Peak Soldering Temperature P Operating Junction and Storage Temperature ...

Page 4

PULSE WIDTH 0.1 0 Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 1000 50V ≤60µs PULSE WIDTH 100 175° 25°C TJ ...

Page 5

175° 25° -40° 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward ...

Page 6

Duty Cycle = Single Pulse 0.01 10 0.05 0.10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ∆Τ 25°C and Tstart = 150°C. 0.1 1.0E-06 1.0E-05 Fig 15. Typical Avalanche Current Vs.Pulsewidth 350 TOP Single Pulse ...

Page 7

DUT 20K Fig 18a. Gate Charge Test Circuit D.U 20V 0.01 Ω Fig 19a. Unclamped Inductive Test Circuit ≤ 1 ≤ 0.1 % Fig 20a. Switching Time ...

Page 8

Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations GATE D = DRAIN S = SOURCE www.irf.com ...

Page 9

Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations DirectFET™ Part Marking Note: For the most current drawing please refer to IR website at www.irf.com DIMENSIONS IMPERIAL METRIC MAX MIN CODE MIN MAX 9.15 0.356 ...

Page 10

DirectFET™ Tape & Reel Dimension (Showing component orientation). 10 NOTE: Controlling dimensions in mm Std reel quantity is 4000 parts. (ordered as IRF7799L2PBF). REEL DIMENSIONS STANDARD OPTION (QTY 4000) METRIC IMPERIAL CODE MIN MIN MAX MAX A 330.0 12.992 N.C ...

Page 11

... Part number Package Type IRF7799L2TRPbF DirectFET2 Large Can IRF7799L2TR1PbF DirectFET2 Large Can † Qualification Information Qualification level Moisture Sensitivity Level RoHS Compliant † Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability †† Higher qualification ratings may be available should the user have such requirements. ...

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