IRL1404SPBF International Rectifier, IRL1404SPBF Datasheet

IRL1404SPBF

Manufacturer Part Number

IRL1404SPBF

Description

MOSFET N-CH 40V 160A D2PAK

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRL1404LPBF.pdf (11 pages)

Specifications of IRL1404SPBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

4 mOhm @ 95A, 10V

Drain To Source Voltage (vdss)

40V

Current - Continuous Drain (id) @ 25° C

160A

Vgs(th) (max) @ Id

3V @ 250µA

Gate Charge (qg) @ Vgs

140nC @ 5V

Input Capacitance (ciss) @ Vds

6600pF @ 25V

Power - Max

3.8W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

*IRL1404SPBF

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRL1404SPBF

Manufacturer:

Quantity:

20 000

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Description

Seventh Generation HEXFET

International Rectifier utilize advanced processing

techniques to achieve extremely low on-resistance per

silicon area.

switching speed and ruggedized device design that

HEXFET power MOSFETs are well known for, provides

the designer with an extremely efficient and reliable

device for use in a wide variety of applications.

The D

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

its low internal connection resistance and can dissipate up

to 2.0W in a typical surface mount application.

The through-hole version (IRL1404L) is available for low-

Absolute Maximum Ratings

Thermal Resistance

dv/dt

www.irf.com

STG

θJC

θCS

θJA

Pak is suitable for high current applications because of

@ T

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Lead-Free

Pak is a surface mount power package capable of

= 25°C

= 100°C

= 25°C

This benefit, combined with the fast

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy‚

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt ƒ

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

power MOSFETs from

Parameter

(PCB Mounted)

@ 10V

‡

Typ.

0.50

300 (1.6mm from case)

–––

HEXFET

-55 to + 175

160†

110†

Max.

IRL1404S

640

200

± 20

520

3.8

1.3

5.0

IRL1404SPbF

IRL1404LPbF

Pak

Power MOSFET

DS(on)

Max.

0.75

–––

DSS

= 160A†

= 0.004Ω

= 40V

PD - 95148

IRL1404L

TO-262

Units

W/°C

°C/W

V/ns

°C

04/19/04

Related parts for IRL1404SPBF

IRL1404SPBF Summary of contents

Page 1

... Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient θJA www.irf.com G @ 10V GS @ 10V GS 300 (1.6mm from case) Typ. ––– 0.50 (PCB Mounted) ‡ ––– 95148 IRL1404SPbF IRL1404LPbF ® HEXFET Power MOSFET 40V DSS R = 0.004Ω DS(on 160A† Pak TO-262 ...

Page 2

IRL1404S/LPbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...

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IRL1404SPBF International Rectifier, IRL1404SPBF Datasheet

IRL1404SPBF

Specifications of IRL1404SPBF

Available stocks

Related parts for IRL1404SPBF

IRL1404SPBF Summary of contents

Page 1

Page 2

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