IRL1404SPBF International Rectifier, IRL1404SPBF Datasheet - Page 4

• Manufacturer Part Number: IRL1404SPBF
• Description: MOSFET N-CH 40V 160A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL1404SPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4 mOhm @ 95A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 140nC @ 5V
• Input Capacitance (ciss) @ Vds: 6600pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRL1404SPBF

IRL1404S/LPbF
1000
4
10000
100
8000
6000
4000
2000
10
1
0.0
0
Fig 5. Typical Capacitance Vs.

T = 175 C
Fig 7. Typical Source-Drain Diode
1
J
Drain-to-Source Voltage
V
0.5
SD
V
°
DS

,Source-to-Drain Voltage (V)
Forward Voltage
V
C
C
C
, Drain-to-Source Voltage (V)

T = 25 C
GS
iss
rss
oss
1.0
J
=
=
=
=
0V,
C
C
C
°
gs
gd
ds
1.5

C oss
+ C
+ C
C iss
C rss
10


f = 1MHz
gd ,
gd
2.0
C
ds

V
GS
SHORTED
2.5
= 0 V
3.0
100
10000
1000
100
20
16
12
Fig 8. Maximum Safe Operating Area
10
8
4
0
0

1
Fig 6. Typical Gate Charge Vs.
I =

D
T
T
Single Pulse
C
J
= 25 C
= 175 C

95A
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
V
100
Q , Total Gate Charge (nC)
DS
°
°
G
, Drain-to-Source Voltage (V)
200
BY R

V
V
DS
DS
10

DS(on)
= 32V
= 20V
FOR TEST CIRCUIT
300
SEE FIGURE
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400

1 0us

1 00us

1 ms

1 0ms
13
500
100