IRFP4229PBF International Rectifier, IRFP4229PBF Datasheet

MOSFET N-CH 250V 44A TO-247AC

IRFP4229PBF

Manufacturer Part Number
IRFP4229PBF
Description
MOSFET N-CH 250V 44A TO-247AC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFP4229PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
46 mOhm @ 26A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
44A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
4560pF @ 25V
Power - Max
310W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Transistor Polarity
N Channel
Continuous Drain Current Id
44A
Drain Source Voltage Vds
250V
On Resistance Rds(on)
38mohm
Rds(on) Test Voltage Vgs
10V
Rohs Compliant
Yes
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
44 A
Power Dissipation
310 W
Mounting Style
Through Hole
Gate Charge Qg
72 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRFP4229PBF
Manufacturer:
MOSPEC
Quantity:
30 000
Price:
Features
l
l
l
l
l
l
l
l
Description
Notes  through … are on page 8
www.irf.com
175°C Operating Junction Temperature for
V
I
I
I
I
P
P
T
T
R
R
R
Absolute Maximum Ratings
Thermal Resistance
Energy Recovery and Pass Switch Applications
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
Reliable Operation
Improved Ruggedness
and Reliability
Advanced Process Technology
Key Parameters Optimized for PDP Sustain,
Low E
Low Q
High Repetitive Peak Current Capability for
Short Fall & Rise Times for Fast Switching
Repetitive Avalanche Capability for Robustness
D
D
DM
RP
J
STG
GS
D
D
θJC
θCS
θJA
@ T
@ T
@T
@T
@ T
HEXFET
C
C
C
C
C
PULSE
= 25°C
= 100°C
= 25°C
= 100°C
G
= 100°C
for Fast Response
MOSFET
®
Rating to Reduce Power
Power MOSFET
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Repetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
f
Parameter
Parameter
f
g
MOSFET
PULSE
PDP SWITCH
GS
GS
@ 10V
@ 10V
V
V
R
I
T
RP
J
DS
DS (Avalanche)
DS(ON)
G
max
max @ T
min
Gate
G
typ. @ 10V
typ.
C
= 100°C
Typ.
0.24
–––
–––
Key Parameters
D
S
10lb
-40 to + 175
IRFP4229PbF
x
in (1.1N
Max.
180
310
150
300
±30
2.0
Drain
44
31
87
D
x
m)
MOSFET
Max.
0.49
–––
40
250
300
175
38
87
D
TO-247AC
Source
S
Units
Units
W/°C
°C/W
°C
W
N
m
V
A
°C
G
V
V
A
09/14/07
D
S
1

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IRFP4229PBF Summary of contents

Page 1

... Notes  through … are on page 8 www.irf.com PDP SWITCH V min DS V typ. DS (Avalanche) R typ. @ 10V DS(ON) I max @ max Gate MOSFET PULSE Parameter @ 10V GS @ 10V GS g Parameter f f IRFP4229PbF Key Parameters 250 V 300 100° 175 ° TO-247AC D S Drain Source MOSFET Max. Units ± 180 87 310 ...

Page 2

Electrical Characteristics @ T Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th Drain-to-Source Leakage Current ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.5V 6.0V 100 BOTTOM 5.5V 10 5.5V ≤ 60µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 T J ...

Page 4

L = 220nH C= 0.3µF 1600 C= 0.2µF C= 0.1µF 1200 800 400 100 Temperature (°C) Fig 7. Typical E vs.Temperature PULSE 7000 0V MHZ C iss = C ...

Page 5

125°C 0. 25°C 0. Gate-to-Source Voltage (V) Fig 13. On-Resistance Vs. Gate Voltage 5.0 4.5 4 250µA 3.5 3.0 2.5 2.0 ...

Page 6

D.U.T + ƒ • • - • + ‚ -  • • • SD • Fig 18 D.U 20V GS 0.01 Ω Fig 19a. Unclamped Inductive Test Circuit DUT ...

Page 7

A RG DRIVER L B Ipulse RG DUT Fig 21a. t and E Test Circuit st PULSE ≤ 1 ≤ 0.1 % Fig 22a. Switching Time Test Circuit www.irf.com PULSE A C PULSE B VCC Fig 21c. E Test Waveforms ...

Page 8

TO-247AC package is not recommended for Surface Mount Application. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting T = 25° 0.85mH 25Ω ƒ Pulse width ≤ 400µs; duty ...

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