IXTH102N20T IXYS, IXTH102N20T Datasheet
IXTH102N20T
Specifications of IXTH102N20T
Related parts for IXTH102N20T
IXTH102N20T Summary of contents
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... V = ± GSS DSS DS DSS 0.5 I DS(on D25 © 2007 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXTH102N20T IXTQ102N20T IXTV102N20T Maximum Ratings 200 ± 30 102 75 250 JM 5 1.2 ≤ DSS 750 -55 ... +175 175 -55 ... +175 300 260 1. Nm/lb.in. 11..65 / 2.5..14.6 6 5.5 ...
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... IXYS reserves the right to change limits, test conditions, and dimen- sions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 IXTH102N20T IXTQ102N20T IXTV102N20T Characteristic Values Min. Typ. , Note ...
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... Normalized to I DS(on) vs. Drain Current 5 10V 4.5 GS 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0 100 I - Amperes D © 2007 IXYS CORPORATION, All rights reserved IXTH102N20T IXTQ102N20T IXTV102N20T 240 V = 10V GS 220 8V 7V 200 180 160 140 6V 120 100 1.4 1.6 1.8 2 2.2 3.5 ...
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... V - Volts SD Fig. 11. Capacitance 10,000 MHz 1,000 100 Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. IXTH102N20T IXTQ102N20T IXTV102N20T 160 140 120 100 5.4 5.8 6.2 6 25ºC J 0.9 1 1.1 1.2 1.3 1.00 C iss ...
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... 100V 102A, 51A Ohms G Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 125º 25º 25º 125º Amperes D © 2007 IXYS CORPORATION, All rights reserved IXTH102N20T IXTQ102N20T IXTV102N20T 27 = 2.5 Ω 15V 100V 105 115 125 d(off 2.5 Ω 15V 100V 100 105 Fig ...