IRFB4228PBF International Rectifier, IRFB4228PBF Datasheet - Page 3

• Manufacturer Part Number: IRFB4228PBF
• Description: MOSFET N-CH 150V 83A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB4228PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 15 mOhm @ 33A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 83A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 107nC @ 10V
• Input Capacitance (ciss) @ Vds: 4530pF @ 25V
• Power - Max: 330W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 150V
• On Resistance Rds(on): 12mohm
• Rds(on) Test Voltage Vgs: 10V
• Operating Temperature Range: -40°C To +175°C
• Transistor Case Style: TO-220AB
• Rohs Compliant: Yes
• Continuous Drain Current Id: 33A
• Threshold Voltage Vgs Typ: 5V
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 83 A
• Power Dissipation: 330 W
• Mounting Style: Through Hole
• Gate Charge Qg: 72 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 5. Typical E
1000
1000
0.01
120
110
100
100
100
0.1
0.1
90
80
70
60
50
40
30
20
10
Fig 3. Typical Transfer Characteristics
10
Fig 1. Typical Output Characteristics
1
1
0.1
85
3
L = 220nH
C = 0.3µF
90
T J = 175°C
4
V DS, Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
100°C
25°C
V GS , Gate-to-Source Voltage (V)
PULSE
95
5
1
5.0V
100 105 110 115 120 125
vs. Drain-to-Source Voltage
6
T J = 25°C
≤ 60µs PULSE WIDTH
Tj = 25°C
10
V DS = 25V
≤60µs PULSE WIDTH
7
8
TOP
BOTTOM
100
9
10
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
1000
11
Fig 4. Normalized On-Resistance vs. Temperature
1000
120
110
100
100
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
90
80
70
60
50
40
30
20
10
10
Fig 6. Typical E
1
Fig 2. Typical Output Characteristics
-60 -40 -20 0 20 40 60 80 100120140160180
0.1
60
L = 220nH
C = Variable
I D = 50A
V GS = 10V
65
100°C
V DS , Drain-to-Source Voltage (V)
25°C
T J , Junction Temperature (°C)
70
I D , Peak Drain Current (A)
1
75
PULSE
5.0V
80
IRFB4228PbF
≤ 60µs PULSE WIDTH
Tj = 175°C
10
vs. Drain Current
85
90
TOP
BOTTOM
100
95 100 105
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
1000
3