IXTQ82N25P IXYS, IXTQ82N25P Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXTQ82N25P
Manufacturer Part Number
IXTQ82N25P
Description
MOSFET N-CH 250V 82A TO-3P
Specifications of IXTQ82N25P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
35 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
82A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
142nC @ 10V
Input Capacitance (ciss) @ Vds
4800pF @ 25V
Power - Max
500W
Mounting Type
Through Hole
Package / Case
TO-3P
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.035 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
82 A
Power Dissipation
500 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
250
Id(cont), Tc=25°c, (a)
82
Rds(on), Max, Tj=25°c, (?)
0.035
Ciss, Typ, (pf)
4800
Qg, Typ, (nc)
142
Trr, Typ, (ns)
200
Pd, (w)
500
Rthjc, Max, (k/w)
0.25
Package Style
TO-3P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
PolarHT
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2006 IXYS All rights reserved
D25
D(RMS)
DM
AR
GSS
DSS
J
JM
stg
L
DSS
DGR
GSS
GSM
AR
AS
D
SOLD
GS(th)
DS(on)
d
J
DSS
= 25° C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
External lead current limit
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (TO-3P, TO-264)
TO-3P
TO-264
TO-268
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
S
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25° C to 150° C
= 25° C to 150° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
, I
D
D
DC
D
= 250 µA
= 250µA
, V
G
= 0.5 I
= 4 Ω
DS
= 0
D25
GS
= 1 MΩ
DD
T
J
≤ V
= 125° C
DSS
IXTK 82N25P
IXTQ 82N25P
IXTT 82N25P
JM
,
250
Min.
2.5
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
250
250
±20
±30
200
500
150
300
260
1.0
5.5
5.0
82
75
60
40
10
10
±100
250
Max.
5.0
25
35
V/ns
m Ω
mJ
nA
µA
µA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
g
g
g
J
TO-264 (IXTK)
TO-3P (IXTQ)
TO-268 (IXTT)
G = Gate
S = Source
Features
l
l
l
Advantages
l
l
l
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
G
G
R
D
V
I
D
DS(on)
D25
DSS
S
S
G
S
D = Drain
TAB = Drain
= 250
= 82
≤ ≤ ≤ ≤ ≤ 35 mΩ Ω Ω Ω Ω
DS99121E(12/05)
(TAB)
D (TAB)
(TAB)
A
V
Related parts for IXTQ82N25P
IXTQ82N25P Summary of contents
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2006 IXYS All rights reserved IXTK 82N25P IXTQ 82N25P IXTT 82N25P Maximum Ratings 250 = 1 MΩ 250 GS ±20 ± 200 1.0 ≤ DSS 500 -55 ... +150 150 -55 ...
... A, -di/dt = 100 A/µ 100 TO-264 (IXTK) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° C, unless otherwise specified) J Min. Typ. ...
... V alue D25 3 10V 3.4 GS 3.1 2.8 2.5 2.2 1.9 1.6 1 100 120 140 160 180 200 mperes D © 2006 IXYS All rights reserved º C 200 180 160 140 120 100 2.5 3 3.5 4 º C 2.6 2.4 2.2 1.8 1.6 1.4 1 ...
... T = 125º 0.3 0.5 0.7 0 Volts SD Fig. 11. Capacitance 10000 f = 1MHz C iss 1000 C oss C rss 100 Volts DS IXYS reserves the right to change limits, test conditions, and dimensions 6 25ºC J 1.1 1.3 1.5 1000 100 IXTK 82N25P IXTQ 82N25P IXTT 82N25P Fig. 8. Transconductance T = -40º ...
... IXYS All rights reserved Fig . 13. M axim tan ce 10 Puls e W idth - millis ec onds IXTK 82N25P IXTQ 82N25P IXTT 82N25P ...
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