IXTC110N25T IXYS, IXTC110N25T Datasheet

MOSFET N-CH 250V 50A ISOPLUS220

IXTC110N25T

Manufacturer Part Number
IXTC110N25T
Description
MOSFET N-CH 250V 50A ISOPLUS220
Manufacturer
IXYS
Datasheet

Specifications of IXTC110N25T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
27 mOhm @ 55A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
4.5V @ 1mA
Gate Charge (qg) @ Vgs
157nC @ 10V
Input Capacitance (ciss) @ Vds
9400pF @ 25V
Power - Max
180W
Mounting Type
Through Hole
Package / Case
ISOPLUS220™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
27 mOhms
Forward Transconductance Gfs (max / Min)
110 S
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
50 A
Power Dissipation
180 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
250
Id(cont), Tc=25°c, (a)
50
Rds(on), Max, Tj=25°c, (?)
0.027
Ciss, Typ, (pf)
9400
Qg, Typ, (nc)
157
Trr, Typ, (ns)
170
Trr, Max, (ns)
-
Pd, (w)
180
Rthjc, Max, (k/w)
0.69
Package Style
ISOPLUS220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Trench Gate
Power MOSFET
(
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
T
V
F
Weight
Symbol
(T
BV
V
I
I
R
© 2008 IXYS CORPORATION, All rights reserved
D25
DM
A
GSS
DSS
Electrically Isolated Back Surface)
J
JM
stg
L
SOLD
C
DSS
DGR
GSS
GSM
AS
D
ISOL
GS(th)
DS(on)
J
DSS
= 25°C unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
50/60Hz, t = 1 minute, I
Mounting force
V
V
V
V
V
V
Test Conditions
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ± 20V, V
= V
= 0V
= 10V, I
DM
GS
, V
DSS
, I
DD
D
D
D
= 250μA
≤ V
= 1mA
= 55A, Note 1
DS
DSS
= 0V
, T
J
GS
≤ 150°C
ISOL
= 1MΩ
< 1mA, RMS
T
J
= 125°C
JM
IXTC110N25T
11..65 / 2.5..14.6
250
Min.
Characteristic Values
2.5
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
2500
± 20
± 30
22
250
250
180
150
300
260
300
25
10
50
4
1
± 200
Max.
250
4.5
27 mΩ
5
N/lb.
V/ns
μA
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
V
g
J
V
I
R
ISOPLUS220 (IXTC)
G = Gate
S = Source
Features
Advantages
Applications
D25
Silicon chip on Direct-Copper-Bond
substrate
Isolated mounting surface
2500V electrical isolation
Low drain to tab capacitance (< 30pF)
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor drives
Uninterruptible power supplies
High speed power switching
applications
Easy assembly
Space savings
High power density
DS(on)
DSS
G
D
E153432
S
= 50A
= 250V
≤ ≤ ≤ ≤ ≤
D = Drain
27mΩ Ω Ω Ω Ω
Isolated Tab
DS99841B(08/08)

Related parts for IXTC110N25T

IXTC110N25T Summary of contents

Page 1

... D = ± 20V GSS DSS DS DSS 10V 55A, Note 1 DS(on © 2008 IXYS CORPORATION, All rights reserved IXTC110N25T Maximum Ratings 250 = 1MΩ 250 GS ± 20 ± 300 ≤ 150° 180 -55 ... +150 150 -55 ... +150 300 260 < 1mA, RMS 2500 ISOL 11..65 / 2.5..14.6 ...

Page 2

... J Min. Typ. JM 170 2.3 27 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTC110N25T Max. ISOPLUS220 (IXTC) Outline 1.Gate 3.Sourc nC Note: Bottom heatsink (Pin electrically isolated from Pins 1, 2 and 3. 0.69 °C/W °C/W Max ...

Page 3

... 55A Value 125º 25º IXTC110N25T Fig. 2. Extended Output Characteristics @ 25ºC 250 V = 10V GS 225 8V 7V 200 175 150 125 6V 100 Volts DS Fig Normalized to I DS(on) vs. Junction Temperature 3.0 2 10V GS 2.6 2.4 2.2 2 ...

Page 4

... IXYS reserves the right to change limits, test conditions, and dimensions. = 125ºC J 25ºC - 40ºC 5.0 5.4 5.8 6 25ºC J 0.9 1 1.1 1.2 1.3 1.00 C iss C oss 0.10 C rss 0. Volts IXTC110N25T Fig. 8. Transconductance 180 160 140 120 100 Amperes D Fig. 10. Gate Charge 125V 25A D ...

Page 5

... T = 25º 125º 100 110 120 IXTC110N25T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 2Ω 15V 125V Amperes D Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature d(off 2Ω 15V 125V 55A 110A Degrees Centigrade J Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance ...

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