IXTQ200N06P IXYS, IXTQ200N06P Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXTQ200N06P
Manufacturer Part Number
IXTQ200N06P
Description
MOSFET N-CH 60V 200A TO-3P
Specifications of IXTQ200N06P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5 mOhm @ 400A, 15V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
200A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
200nC @ 10V
Input Capacitance (ciss) @ Vds
5400pF @ 25V
Power - Max
714W
Mounting Type
Through Hole
Package / Case
TO-3P
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.006 Ohms
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
200 A
Power Dissipation
714 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
60
Id(cont), Tc=25°c, (a)
200
Rds(on), Max, Tj=25°c, (?)
0.006
Ciss, Typ, (pf)
5400
Qg, Typ, (nc)
200
Trr, Typ, (ns)
90
Pd, (w)
714
Rthjc, Max, (k/w)
0.21
Package Style
TO-3P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
PolarHT
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
D25
D(RMS)
DM
AR
GSS
DSS
J
JM
stg
L
DSS
DGR
GS
GSM
AR
AS
D
SOLD
GS(th)
DS(on)
© 2006 IXYS All rights reserved
d
J
DSS
= 25° C, unless otherwise specified)
Test Conditions
T
T
Transient
Continuous
T
External lead current limit
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
TO-3P
Test Conditions
V
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
S
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
GS
= 25° C to 175° C
= 25° C to 175° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
= 15 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
, I
D
D
DC
D
D
= 250 µA
= 250µA
, V
G
= 60A
= 400A
= 4 Ω
DS
= 0
(TO-3P)
GS
= 1 MΩ
DD
T
J
≤ V
= 150° C
DSS
IXTQ 200N06P
JM
,
Min.
2.5
60
Characteristic Values
-55 ... +175
-55 ... +150
Maximum Ratings
Typ.
5.0
1.13/10 Nm/lb.in.
±30
±20
200
400
714
175
300
260
4.0
5.5
60
60
75
60
80
10
±100
250
Max.
5.0
6.0
25
V/ns
m Ω
m Ω
mJ
° C
° C
nA
µA
µA
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
g
J
Features
l
l
l
Advantages
l
l
l
V
I
R
TO-3P (IXTQ)
D25
International standard package
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
DS(on)
DSS
G
G = Gate
S = Source
D
S
=
= 200 A
≤ ≤ ≤ ≤ ≤ 6.0 mΩ Ω Ω Ω Ω
60 V
D = Drain
TAB = Drain
DS99273E(12/05)
(TAB)
Related parts for IXTQ200N06P
IXTQ200N06P Summary of contents
... GSS DSS DS DSS 60A DS(on 400A GS D Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2006 IXYS All rights reserved IXTQ 200N06P Maximum Ratings MΩ ±30 ±20 200 75 400 4.0 ≤ DSS 714 -55 ... +175 175 -55 ... +150 300 260 1.13/10 Nm/lb.in. ...
... Pulse test, t ≤ 300 µs, duty cycle d ≤ -di/dt = 100 A/µ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° C, unless otherwise specified) J Min. Typ ...
... V - Volts D S Fig Norm alized to 0.5 I DS(on) Value vs. Drain Current 2.4 2.2 2 1.8 1.6 1 15V GS 1.2 1 0.8 0 100 150 200 I - Amperes D © 2006 IXYS All rights reserved C 350 300 250 200 7V 150 6V 100 1.2 1.4 C 2.2 2 1.8 8V 1.6 7V 1.4 1 0 ...
... T = 150 0.4 0.6 0 Volts S D Fig. 11. Capacitance 100,000 f = 1MHz 10,000 1,000 100 Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. 100 5.5 6 6 º 1.2 1.4 1.6 1000 C iss 100 C oss ...
... © 2006 IXYS All rights reserved illis IXTQ 200N06P ...
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