IXFK120N25P IXYS, IXFK120N25P Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXFK120N25P
Manufacturer Part Number
IXFK120N25P
Description
MOSFET N-CH 250V 120A TO-264
Specifications of IXFK120N25P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
24 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
5V @ 4mA
Gate Charge (qg) @ Vgs
185nC @ 10V
Input Capacitance (ciss) @ Vds
8000pF @ 25V
Power - Max
700W
Mounting Type
Through Hole
Package / Case
TO-264
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.024 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
120 A
Power Dissipation
700 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
250
Id(cont), Tc=25°c, (a)
120
Rds(on), Max, Tj=25°c, (?)
0.024
Ciss, Typ, (pf)
8700
Qg, Typ, (nc)
185
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
700
Rthjc, Max, (ºc/w)
0.18
Package Style
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
PolarHT
Power MOSFET
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
D25
D(RMS)
DM
AR
GSS
DSS
J
JM
stg
L
DSS
DGR
GS
GSM
AR
AS
D
SOLD
GS(th)
© 2006 IXYS All rights reserved
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
External lead current limit
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
TO-264
PLUS247
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
S
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
TM
= 25°C to 175°C
= 25°C to 175°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
= 0 V, I
= V
= ±20 V, V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/μs, V
GS
HiPerFET
DSS
, I
D
D
D
= 250 μA
= 4 mA
G
= 0.5 I
DS
= 4 Ω
= 0 V
D25
GS
= 1 MΩ
DD
T
≤ V
J
= 125°C
DSS
IXFK 120N25P
IXFX 120N25P
JM
,
250
Min.
2.5
Characteristic Values
-55 ... +175
-55 ... +150
Maximum Ratings
Typ.
19
1.13/10 Nm/lb.in.
250
250
±20
±30
120
300
700
175
300
260
2.5
75
60
60
10
10
6
±200
250
Max.
5.0
25
24
V/ns
mΩ
mJ
nA
μA
μA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
g
g
J
TO-264 (IXFK)
PLUS247 (IXFX)
Features
Advantages
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
V
I
R
t
Easy to mount
Space savings
High power density
G
D25
rr
D
DSS
DS(on)
G = Gate
S = Source
S
= 250
= 120
≤ ≤ ≤ ≤ ≤ 200 ns
≤ ≤ ≤ ≤ ≤
24 mΩ Ω Ω Ω Ω
D = Drain
TAB = Drain
(TAB)
DS99379E(03/06)
(TAB)
A
V
Related parts for IXFK120N25P
IXFK120N25P Summary of contents
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 μs, duty cycle d ≤ © 2006 IXYS All rights reserved IXFK 120N25P IXFX 120N25P Maximum Ratings 250 = 1 MΩ 250 GS ±20 ±30 120 75 300 2.5 ≤ DSS 700 -55 ... +175 175 -55 ...
... Pulse test, t ≤ 300 μs, duty cycle d ≤ -di/dt = 100 A/μ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25°C, unless otherwise specified) J Min. Typ. , pulse test 45 ...
... Norm alize d to 0.5 I DS(on) V alue ain Curr 10V 3 15V - - - - GS 3 2.6 2.2 1.8 1 120 150 mperes D © 2006 IXYS All rights reserved C 250 225 200 175 150 125 100 2.5 3 3.5 C 2.8 9V 2.5 2.2 8V 1.9 7V 1.6 1.3 ...
... T = 150 0.2 0.4 0.6 0 olts S D Fig. 11. Capacitance 10000 1000 f = 1MH z 100 olts DS IXYS reserves the right to change limits, test conditions, and dimensions. 110 100 6.5 7 7.5 8 8.5 10 º 1.2 1.4 1.6 1000 100 C oss IXFK 120N25P IXFX 120N25P Fig. 8. Trans conductance º ...
... Fig. 13. M axim um Trans ie nt The tance 1.000 0.100 0.010 0.001 0.00001 0.0001 © 2006 IXYS All rights reserved 0.001 0.01 Pulse Width - Seconds IXFK 120N25P IXFX 120N25P 0 ...
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