IXTK200N10P IXYS, IXTK200N10P Datasheet

MOSFET N-CH 100V 200A TO-264

IXTK200N10P

Manufacturer Part Number
IXTK200N10P
Description
MOSFET N-CH 100V 200A TO-264
Manufacturer
IXYS
Series
PolarHT™r
Datasheet

Specifications of IXTK200N10P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7.5 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
200A
Vgs(th) (max) @ Id
5V @ 500µA
Gate Charge (qg) @ Vgs
240nC @ 10V
Input Capacitance (ciss) @ Vds
7600pF @ 25V
Power - Max
800W
Mounting Type
Through Hole
Package / Case
TO-264
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0075 Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
200 A
Power Dissipation
800 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
200
Rds(on), Max, Tj=25°c, (?)
0.0075
Ciss, Typ, (pf)
7600
Qg, Typ, (nc)
240
Trr, Typ, (ns)
100
Pd, (w)
800
Rthjc, Max, (k/w)
0.18
Package Style
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTK200N10P
Manufacturer:
IXYS
Quantity:
18 000
Part Number:
IXTK200N10P
Manufacturer:
IXYS
Quantity:
114
PolarHT
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
D25
D(RMS)
DM
AR
GSS
DSS
J
JM
stg
L
© 2006 IXYS All rights reserved
DSS
DGR
GS
GSM
AR
AS
D
SOLD
GS(th)
DS(on)
d
J
DSS
= 25° C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
External lead current limit
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
Test Conditions
V
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
S
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
GS
= 25° C to 175° C
= 25° C to 175° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
= 15 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
, I
D
D
DC
D
D
= 250 µA
= 500µA
, V
G
= 0.5 I
= 400A
= 4 Ω
DS
= 0
D25
GS
= 1 MΩ
DD
T
J
≤ V
= 150° C
IXTK 200N10P
DSS
JM
,
100
Min.
2.5
Characteristic Values
-55 ... +175
-55 ... +150
Maximum Ratings
Typ.
5.5
1.13/10 Nm/lb.in.
100
100
±20
±30
200
400
100
800
175
300
260
75
60
10
10
4
±200
250
Max.
5.0
7.5
25
V/ns
m Ω
m Ω
mJ
nA
µA
µA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
g
J
TO-264 (IXTK)
G = Gate
S = Source
Features
l
l
l
Advantages
l
l
l
International standard package
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
G
D
S
V
I
R
D25
DS(on)
DSS
D = Drain
TAB = Drain
= 100 V
= 200 A
≤ ≤ ≤ ≤ ≤ 7.5 mΩ Ω Ω Ω Ω
(TAB)
DS99186E(10/05)

IXTK200N10P Summary of contents

Page 1

... DSS DS DSS 0.5 I DS(on D25 400A GS D Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2006 IXYS All rights reserved IXTK 200N10P Maximum Ratings 100 = 1 MΩ 100 GS ±20 ±30 200 75 400 JM 60 100 4 ≤ DSS 800 -55 ... +175 175 -55 ... +150 ...

Page 2

... Pulse test, t ≤ 300 µs, duty cycle d ≤ -di/dt = 100 A/µ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° C, unless otherwise specified) J Min. Typ. , pulse test 60 ...

Page 3

... D S Fig Norm alized to 0.5 I DS(on) Value vs. Drain Current 2.4 2.2 2 1.8 1.6 1 15V GS 1.2 1 0.8 0 100 150 200 I - Amperes D © 2006 IXYS All rights reserved C 350 300 250 8V 200 150 7V 100 1.2 1.4 1.6 C 2.4 2.2 8V 1.8 1.6 7V 1.4 1.2 6V ...

Page 4

... T = 150 0.4 0.6 0 Volts S D Fig. 11. Capacitance 100,000 f = 1MHz 10,000 1,000 100 Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. 140 120 100 7 º 1.2 1.4 1.6 1000 C iss C oss 100 C rss ...

Page 5

... © 2006 IXYS All rights reserved illis IXTK 200N10P ...

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