IXTK200N10P IXYS, IXTK200N10P Datasheet - Page 4

MOSFET N-CH 100V 200A TO-264

IXTK200N10P

Manufacturer Part Number
IXTK200N10P
Description
MOSFET N-CH 100V 200A TO-264
Manufacturer
IXYS
Series
PolarHT™r
Datasheet

Specifications of IXTK200N10P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7.5 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
200A
Vgs(th) (max) @ Id
5V @ 500µA
Gate Charge (qg) @ Vgs
240nC @ 10V
Input Capacitance (ciss) @ Vds
7600pF @ 25V
Power - Max
800W
Mounting Type
Through Hole
Package / Case
TO-264
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0075 Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
200 A
Power Dissipation
800 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
200
Rds(on), Max, Tj=25°c, (?)
0.0075
Ciss, Typ, (pf)
7600
Qg, Typ, (nc)
240
Trr, Typ, (ns)
100
Pd, (w)
800
Rthjc, Max, (k/w)
0.18
Package Style
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTK200N10P
Manufacturer:
IXYS
Quantity:
18 000
IXYS reserves the right to change limits, test conditions, and dimensions.
100,000
10,000
1,000
300
250
200
150
100
350
300
250
200
150
100
50
50
100
0
0
0.4
4
0
T
J
4.5
= 150
T
f = 1MHz
J
0.6
5
= -40
Fig. 11. Capacitance
150
Fig. 7. Input Adm ittance
º
5
Fig. 9. Source Current vs.
Source-To-Drain Voltage
C
25
º
º
º
10
C
C
C
5.5
0.8
V
V
15
G S
6
S D
V
T
J
DS
- Volts
- Volts
= 25
6.5
1
20
- Volts
º
C
7
25
1.2
7.5
30
8
1.4
C iss
C oss
C rss
8.5
35
1.6
9
40
1000
140
120
100
100
80
60
40
20
10
10
0
9
8
7
6
5
4
3
2
1
0
0
0
1
R
V
I
I
DS(on)
D
G
25
DS
= 100A
= 10mA
50
Fig. 8. Transconductance
= 50V
50
Limit
Fig. 10. Gate Charge
Fig. 12. Forw ard-Bias
Safe Operating Area
100
Q
75
10
G
I
DC
100 125 150 175 200 225 250
- nanoCoulombs
V
D
150
D S
- Amperes
IXTK 200N10P
- Volts
200
100
250
100µs
1ms
10ms
T
T
T
J
C
J
= 175
= 25
= -40
150
300
25
º
º
º
C
º
º
C
C
C
C
1000
350

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