IXFX200N10P IXYS, IXFX200N10P Datasheet - Page 2

MOSFET N-CH 100V 200A PLUS247

IXFX200N10P

Manufacturer Part Number
IXFX200N10P
Description
MOSFET N-CH 100V 200A PLUS247
Manufacturer
IXYS
Series
Polar™r
Datasheet

Specifications of IXFX200N10P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7.5 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
200A
Vgs(th) (max) @ Id
5V @ 8mA
Gate Charge (qg) @ Vgs
235nC @ 10V
Input Capacitance (ciss) @ Vds
7600pF @ 25V
Power - Max
830W
Mounting Type
Through Hole
Package / Case
PLUS247™-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0075 Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
200 A
Power Dissipation
830 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
200
Rds(on), Max, Tj=25°c, (?)
0.0075
Ciss, Typ, (pf)
7600
Qg, Typ, (nc)
235
Trr, Typ, (ns)
-
Trr, Max, (ns)
150
Pd, (w)
830
Rthjc, Max, (ºc/w)
0.18
Package Style
PLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFX200N10P
Manufacturer:
IXYS
Quantity:
35 500
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
S
SM
RM
d(on)
r
d(off)
f
rr
fs
one or moreof the following U.S. patents:
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
PLUS 247
Terminals: 1 - Gate
TM
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Test Conditions
V
V
V
R
V
Test Conditions
V
Repetitive
I
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
I
V
F
F
(IXFX) Outline
DS
GS
GS
GS
GS
R
G
TO-264 and PLUS247
= I
= 25 A, dI/dt = 100 A/μs
= 50 V, V
= 10 V; I
= 3.3 Ω (External)
= 10 V, V
= 0 V, V
= 10 V, V
= 0 V
S
, V
GS
= 0 V,
D
DS
GS
DS
= 0.5 I
DS
= 25 V, f = 1 MHz
= 0 V
= 0.5 V
= 0.5 V
4,850,072
4,881,106
D25
, pulse test
DSS
DSS
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
Q
R
1
2
4,931,844
5,017,508
5,034,796
, I
1
2
, I
D
D
20.80
15.75
19.81
= 0.5 I
4.83
2.29
1.91
1.14
1.91
2.92
0.61
3.81
5.59
4.32
Min.
= 60 A
Millimeter
5.45 BSC
(T
(T
J
J
5,049,961
5,063,307
5,187,117
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
21.34
16.13
20.32
D25
Max.
5.21
2.54
2.16
1.40
2.13
3.12
0.80
4.32
6.20
4.83
.190
.090
.075
.045
.075
.115
.024
.819
.620
.780
.150
.220 0.244
.170
Min.
Min.
Min.
.215 BSC
Inches
5,237,481
5,381,025
5,486,715
60
Characteristic Values
Characteristic Values
Max.
.205
.100
.085
.055
.084
.123
.031
.840
.635
.800
.170
.190
7600
2900
Typ.
Typ.
0.15
860
150
235
135
0.4
97
30
35
90
50
6,162,665
6,259,123 B1
6,306,728 B1
6
Max.
Max.
0.18°C/W
200
400
150 ns
1.5
°C/W
6,404,065 B1
6,534,343
6,583,505
nC
nC
nC
μC
pF
pF
pF
ns
ns
ns
ns
S
A
A
V
A
TO-264 (IXFK) Outline
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478 B2
IXFK 200N10P
IXFX 200N10P

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