IXUC200N055 IXYS, IXUC200N055 Datasheet

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IXUC200N055

Manufacturer Part Number
IXUC200N055
Description
MOSFET N-CH 55V 200A ISOPLUS-220
Manufacturer
IXYS
Datasheet

Specifications of IXUC200N055

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5.1 mOhm @ 100A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
200A
Vgs(th) (max) @ Id
4V @ 2mA
Gate Charge (qg) @ Vgs
200nC @ 10V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
ISOPLUS220™
Vdss, Max, (v)
55
Id(cont), Tc=25°c, (a)
200
Rds(on), Max, Tj=25°c, (?)
0.0051
Ciss, Typ, (pf)
-
Qg, Typ, (nc)
200
Trr, Typ, (ns)
80
Pd, (w)
300
Rthjc, Max, (k/w)
0.5
Package Style
ISOPLUS220™
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXUC200N055
Manufacturer:
IXYS
Quantity:
494
Trench Power MOSFET
ISOPLUS220
Electrically Isolated Back Surface
Symbol
R
V
I
I
Symbol
V
V
I
I
I
I
I
E
P
T
T
T
T
V
F
Weight
© 2000 IXYS All rights reserved
DSS
GSS
D25
D90
S25
S90
D(RMS)
L
GS(th)
J
JM
stg
C
DS(on)
DSS
GS
AS
D
ISOL
T
Continuous
T
T
T
T
Package lead current limit
T
T
1.6 mm (0.062 in.) from case for 10 s
RMS leads-to-tab, 50/60 Hz, t = 1 minute
Mounting force
J
C
C
C
C
C
C
Test Conditions
V
V
V
V
V
Test Conditions
= 25°C to 150°C
= 25°C; Note 1
= 90°C, Note 1
= 25°C; Note 1, 2
= 90°C, Note 1, 2
= 25°C
= 25°C
V
GS
GS
DS
DS
GS
GS
= 10 V, I
= 10 V, I
= V
= V
= 0 V
= ±20 V
GS
DSS
, I
D
DC
TM
D
D
= 2 mA
, V
= 100 A, Note 3
= I
DS
D90
= 0
, Note 3
ADVANCED TECHNICAL INFORMATION
T
T
J
J
(T
= 25°C
= 125°C
J
= 25°C, unless otherwise specified)
Maximum Ratings
min.
11 ... 65 / 2.4 ...11 N/lb
IXUC200N055
Characteristic Values
2
-55 ... +175
-55 ... +150
2500
typ.
±20
200
160
200
140
500
300
175
300
4.0
0.2
55
45
3
max.
±200
5.1 mW
20
4
mJ
mW
V~
mA
°C
°C
°C
°C
mA
W
V
V
A
A
A
A
A
nA
g
V
substrate
Applications
Advantages
G = Gate,
S = Source
* Patent pending
Features
l
l
l
l
l
l
l
l
l
l
Silicon chip on Direct-Copper-Bond
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Trench MOSFET
- very low R
- fast switching
- usable intrinsic reverse diode
Low drain to tab capacitance(<30pF)
Unclamped Inductive Switching (UIS)
rated
Automotive 42V and 12V systems
- electronic switches to replace relays
- choppers to replace series dropping
- inverters for AC drives, e.g. starter
- DC-DC converters, e.g. 12V to 42V, etc.
Power supplies
- DC - DC converters
- Solar inverters
Battery powered systems
- choppers or inverters for motor control
- battery chargers
Easy assembly: no screws or isolation
foils required
Space savings
High power density
and fuses
resistors used for motors, heaters, etc.
generator
in hand tools
G
D
S
V
I
R
D25
DS(on)
DSS
DS(on)
TM
D = Drain,
Isolated back surface*
= 55 V
= 200 A
= 5.1 mW
98761 (11/00)

Related parts for IXUC200N055

IXUC200N055 Summary of contents

Page 1

... GS(th DSS DS DSS ± GSS © 2000 IXYS All rights reserved ADVANCED TECHNICAL INFORMATION IXUC200N055 Maximum Ratings 55 ±20 200 160 200 140 45 500 300 -55 ... +175 175 -55 ... +150 300 2500 11 ... 65 / 2.4 ...11 N/lb 3 Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. ...

Page 2

... 100 0.5 • 115 DSS 230 155 0.30 Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. 0 4,850,072 IXUC200N055 ISOPLUS220 OUTLINE max 0.5 K/W K/W max. 1 Note: All terminals are solder plated Gate 2 - Drain 3 - Source 4,881,106 5,017,508 5,049,961 4,931,844 5,034,796 ...

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