IXUC200N055 IXYS, IXUC200N055 Datasheet - Page 2

• Manufacturer Part Number: IXUC200N055
• Description: MOSFET N-CH 55V 200A ISOPLUS-220
• Manufacturer: IXYS

Specifications of IXUC200N055

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.1 mOhm @ 100A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 200A
• Vgs(th) (max) @ Id: 4V @ 2mA
• Gate Charge (qg) @ Vgs: 200nC @ 10V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: ISOPLUS220™
• Vdss, Max, (v): 55
• Id(cont), Tc=25°c, (a): 200
• Rds(on), Max, Tj=25°c, (?): 0.0051
• Ciss, Typ, (pf): -
• Qg, Typ, (nc): 200
• Trr, Typ, (ns): 80
• Pd, (w): 300
• Rthjc, Max, (k/w): 0.5
• Package Style: ISOPLUS220™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
Q
Q
Q
t
t
t
t
R
R
Source-Drain Diode
Symbol
V
t
Note: 1. MOSFET chip capability
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592
d(on)
r
d(off)
f
rr
thJC
thCH
SD
g(on)
gs
gd
2. Intrinsic diode capability
3. Pulse test, t £ 300 ms, duty cycle d £ 2 %
Test Conditions
Test Conditions
I
Note 3
I
F
F
= 50 A, V
= 150 A, di/dt = -200 A/ms, V
V
V
I
D
GS
GS
= 50 A, R
= 10 V, V
= 10 V, V
GS
= 0 V
G
= 4.7 W
DS
DS
= 14 V, I
= 0.5 • V
(T
(T
D
DSS
DS
= 100 A
J
J
= 30 V
,
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
min.
min.
Characteristic Values
Characteristic Values
typ.
0.30
typ.
200
115
230
155
0.9
80
4,850,072
44
72
35
max.
max.
0.5
1.3
4,881,106
4,931,844
K/W
K/W
nC
nC
nC
ns
ns
ns
ns
ns
V
ISOPLUS220 OUTLINE
5,017,508
5,034,796
Note: All terminals are solder plated.
1 - Gate
2 - Drain
3 - Source
IXUC200N055
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025