IXTK80N25 IXYS, IXTK80N25 Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXTK80N25
Manufacturer Part Number
IXTK80N25
Description
MOSFET N-CH 250V 80A TO-264
Specifications of IXTK80N25
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
33 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
240nC @ 10V
Input Capacitance (ciss) @ Vds
6000pF @ 25V
Power - Max
540W
Mounting Type
Through Hole
Package / Case
TO-264AA
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.033 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
80 A
Power Dissipation
540 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
250
Id(cont), Tc=25°c, (a)
80
Rds(on), Max, Tj=25°c, (?)
0.035
Ciss, Typ, (pf)
6000
Qg, Typ, (nc)
240
Trr, Typ, (ns)
300
Pd, (w)
540
Rthjc, Max, (k/w)
0.23
Package Style
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
© 2003 IXYS All rights reserved
High Current
MegaMOS
N-Channel Enhancement Mode
Preliminary Data Sheet
Symbol
V
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
(T
V
V
I
I
R
D25
D(RMS)
DM
AR
GSS
DSS
J
JM
stg
L
DGR
GS
GSM
AR
D
GS(th)
DSS
AS
DSS
DS(on)
d
J
= 25°C unless otherwise specified)
T
1.6 mm (0.063 in.) from case for 10 s
Mounting torque
TO-264
Test conditions
T
T
Continuous
Transient
T
External lead current limit
T
T
I
T
Test Conditions
V
V
V
V
V
V
Pulse test, t ≤ 300 ms, duty cycle d ≤ 2%
T
T
S
C
J
J
C
C
C
J
GS
GS
GS
GS
C
C
DS
DS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C MOSFET chip capability
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
= 0 V, I
= V
= ±20 V DC, V
= V
= 0 V
= 10 V, I
DM
GS
DSS
, di/dt ≤ 100 A/µs, V
, I
TM
D
D
= 1 mA
D
= 250 µA
= 0.5 I
G
FET
= 2 Ω
DS
D25
= 0
GS
= 1.0 MΩ
DD
≤ V
T
T
J
J
= 125°C
= 25°C
DSS
JM
250
Min. Typ.
2.0
IXTK 80N25
Characteristic Values
-55 ... +150
-55 ... +150
Maximum ratings
0.7/6
±20
±30
250
250
320
540
150
300
2.5
80
75
80
60
10
5
±100
4.0
50
33 mΩ
Nm/lb.in.
Max.
2 mA
V/ns
mJ
° C
° C
° C
° C
nA
µA
W
V
A
A
A
A
V
g
J
V
V
V
V
TO-264 AA (IXTK)
G = Gate
S = Source
Features
•
•
•
•
Applications
•
•
•
Advantages
•
•
•
Low R
Rugged polysilicon gate cell structure
International standard package
Fast switching times
V
I
R
Motor controls
DC choppers
Switched-mode power supplies
Easy to mount with one screw
(isolated mounting screw hole)
Space savings
High power density
D25
DSS
DS(on)
G
DS (on)
D
S
HDMOS
= 250
=
=
D
Tab = Drain
TM
= Drain
80
33 mΩ Ω Ω Ω Ω
DS98953A(11/03)
process
V
A
D (TAB)
Related parts for IXTK80N25
IXTK80N25 Summary of contents
... V = ± GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 ms, duty cycle d ≤ 2% © 2003 IXYS All rights reserved IXTK 80N25 Maximum ratings 250 = 1.0 MΩ 250 ±20 ± 320 2.5 ≤ DSS 540 -55 ... +150 150 -55 ... +150 300 0.7/6 ...
... Pulse test, t ≤ 300 µs, duty cycle d ≤ 25A, -di/dt = 100 A/µ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic values Min. Typ. , pulse test 40 56 ...
... GS 2.6 2.4 2 125º 1.8 1.6 1 25ºC J 1 100 120 140 160 180 200 I - Amperes D © 2003 IXYS All rights reserved 200 180 9V 8V 160 140 7V 120 100 6V 5V 1.5 2 2.5 2.6 2 2.2 7V 1.8 6V 1.6 1.4 1.2 5V 0.8 ...
... T = 125º 0.4 0.6 0 Volts S D Fig. 11. Capacitance 10000 f = 1MHz 1000 100 Volts D S IXYS reserves the right to change limits, test conditions, and dimensions. 6 6.5 7 7.5 = 25º 1.2 1.4 1000 C iss 100 C oss C rss IXTK 80N25 Fig. 8. Transconductance -40º 25ºC 60 125º ...
... Fig . 13 Bias e d Saf atin (FBSOA ) © 2003 IXYS All rights reserved 1 0 Puls e W idth - millis ec onds IXTK 80N25 ...
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