IXFK60N25Q IXYS, IXFK60N25Q Datasheet
IXFK60N25Q
Manufacturer Part Number
IXFK60N25Q
Description
MOSFET N-CH 250V 60A TO-264AA
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFT60N25Q.pdf
(2 pages)
Specifications of IXFK60N25Q
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
47 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
60A
Vgs(th) (max) @ Id
4V @ 4mA
Gate Charge (qg) @ Vgs
180nC @ 10V
Input Capacitance (ciss) @ Vds
5100pF @ 25V
Power - Max
360W
Mounting Type
Through Hole
Package / Case
TO-264AA
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.047 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
60 A
Power Dissipation
360 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
250
Id(cont), Tc=25°c, (a)
60
Rds(on), Max, Tj=25°c, (?)
0.047
Ciss, Typ, (pf)
5100
Qg, Typ, (nc)
180
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
357
Rthjc, Max, (ºc/w)
0.35
Package Style
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFK60N25Q
Manufacturer:
IXYS
Quantity:
18 000
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
© 2000 IXYS All rights reserved
HiPerFET
Power MOSFETs
Q-Class
Symbol
V
V
I
I
R
IXYS reserves the right to change limits, test conditions, and dimensions.
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
Low Gate Charge and Capacitances
DM
AR
D25
GSS
DSS
L
AR
D
J
JM
stg
DSS
DGR
GS
GSM
AS
DSS
GS(th)
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.063 in) from case for 10 s
Mounting torque
Test Conditions
V
V
V
V
V
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
S
C
C
C
C
C
C
J
J
J
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
£ I
£ 150°C, R
= 25°C
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
DM
TM
, di/dt £ 100 A/ms, V
GS
DSS
, I
D
D
DC
D
= 1 mA
= 4 mA
, V
G
= 0.5 • I
= 2 W
DS
= 0
D25
GS
= 1 MW
DD
T
T
£ V
J
J
Advanced Technical Information
(T
= 25°C
= 125°C
DSS
J
rr
= 25°C, unless otherwise specified)
JM
TO-247
TO-264
TO-247
TO-264
TO-268
,
IXFH 60N25Q
IXFK 60N25Q
IXFT 60N25Q
min.
250
Characteristic Values
-55 ... +150
-55 ... +150
2
Maximum Ratings
typ.
1.13/10 Nm/lb.in.
0.9/6 Nm/lb.in.
150
250
250
±20
±30
240
360
300
1.5
60
60
45
10
5
6
4
max.
±200
50
47 mW
4
1 mA
V/ns
mJ
°C
°C
°C
°C
nA
mA
W
V
V
V
V
A
A
A
V
V
g
g
g
J
Features
• Low gate charge
• International standard packages
• Epoxy meet UL 94 V-0, flammability
• Low R
• Rugged polysilicon gate cell structure
• Avalanche energy and current rated
• Fast intrinsic Rectifier
Advantages
• Easy to mount
• Space savings
• High power density
TO-247 AD (IXFH)
TO-268 (D3) ( IXFT)
TO-264 AA (IXFK)
G = Gate
S = Source
classification
V
I
R
t
D25
rr
DS(on)
DSS
DS (on)
G
HDMOS
= 250
=
=
£ 250 ns
D
G
S
S
TAB = Drain
60
47 mW
TM
process
98630 (6/99)
V
A
D (TAB)
(TAB)
(TAB)
1 - 2
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IXFK60N25Q Summary of contents
Page 1
... DSS 0.5 • I DS(on Pulse test, t £ 300 ms, duty cycle d £ IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved Advanced Technical Information IXFH 60N25Q IXFK 60N25Q IXFT 60N25Q rr Maximum Ratings 250 = 1 MW 250 GS ± ...
Page 2
... L2 1.00 1.15 .039 .045 L3 0.25 BSC .010 BSC L4 3.80 4.10 .150 .161 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXFH 60N25Q IXFK 60N25Q IXFT 60N25Q TO-247 AD (IXFH) Outline max Dim ...