IXTK62N25 IXYS, IXTK62N25 Datasheet
IXTK62N25
Manufacturer Part Number
IXTK62N25
Description
MOSFET N-CH 250V 62A TO-264
Manufacturer
IXYS
Series
MegaMOS™r
Datasheet
1.IXTK62N25.pdf
(5 pages)
Specifications of IXTK62N25
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
35 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
62A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
240nC @ 10V
Input Capacitance (ciss) @ Vds
5400pF @ 25V
Power - Max
390W
Mounting Type
Through Hole
Package / Case
TO-264
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.035 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
62 A
Power Dissipation
390 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
250
Id(cont), Tc=25°c, (a)
62
Rds(on), Max, Tj=25°c, (?)
0.035
Ciss, Typ, (pf)
-
Qg, Typ, (nc)
67
Trr, Typ, (ns)
-
Pd, (w)
-
Rthjc, Max, (k/w)
-
Package Style
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXTK62N25
Manufacturer:
ON
Quantity:
40 000
High Current
MegaMOS
N-Channel Enhancement Mode
Preliminary Data Sheet
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
(T
V
V
I
I
R
DM
D25
AR
GSS
DSS
J
JM
stg
L
DGR
GS
GSM
AR
AS
D
GS(th)
DSS
DSS
DS(on)
d
J
= 25°C unless otherwise specified)
T
1.6 mm (0.063 in.) from case for 10 s
Mounting torque
TO-264
Test conditions
T
T
Continuous
Transient
T
T
T
I
T
Test Conditions
V
V
V
V
V
V
Pulse test, t ≤ 300 ms, duty cycle d ≤ 2%
T
T
S
C
J
J
C
C
C
J
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
= 0 V, I
= V
= ±20 V DC, V
= V
= 0 V
= 10 V, I
DM
GS
DSS
, di/dt ≤ 100 A/µs, V
, I
TM
D
D
D
= 1 mA
= 250 µA
= 0.5 I
G
FET
= 2 Ω
DS
D25
= 0
GS
= 1.0 MΩ
DD
≤ V
T
T
J
J
= 25°C
= 125°C
DSS
JM
250
IXTK 62N25
Min. Typ.
2.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum ratings
0.7/6
±20
±30
250
250
248
390
150
300
1.5
62
62
45
10
5
±100
4.0
50
35 mΩ
Nm/lb.in.
Max.
2 mA
V/ns
mJ
° C
° C
° C
° C
nA
µA
W
A
A
A
V
V
g
J
V
V
V
V
TO-264
G = Gate
S = Source
Features
•
•
•
•
Applications
•
•
•
Advantages
•
•
•
V
I
R
Low R
Rugged polysilicon gate cell structure
International standard package
Fast switching times
Motor controls
DC choppers
Switched-mode power supplies
Easy to mount with one screw
(isolated mounting screw hole)
Space savings
High power density
D25
DSS
DS(on)
G
DS (on)
D
S
HDMOS
= 250
=
=
D
Tab = Drain
= Drain
62
35 mΩ Ω Ω Ω Ω
TM
DS98877D(05/04)
process
A
V
D (TAB)
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IXTK62N25 Summary of contents
Page 1
High Current MegaMOS FET TM N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test conditions 25°C to 150°C DSS 25°C to 150°C; R DGR Continuous GS V Transient GSM I T ...
Page 2
... Q1 8.38 8.69 R 3.81 4.32 Max. R1 1.78 2.29 S 6.04 6. 1.57 1.83 A Note: IXTK62N25 MOSFET will be supplied in either package 1.5 V outline at the discretion of the vendor. ns µ C 5,381,025 6,162,665 6,306,728 B1 6,534,343 5,486,715 6,259,123 B1 6,404,065 B1 6,583,505 Inches Min. Max. .190 .202 .100 .114 ...
Page 3
Fig. 1. Output Characteristics @ 25 Deg 10V 0 Volts D S Fig. 3. Output Characteristics @ 125 Deg. ...
Page 4
... V - Volts S D Fig. 11. Capacitance 10000 f = 1MHz 1000 100 Volts D S IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 100 6.5 7 25ºC J ...
Page 5
Fig . 13. M axim tan Puls e W ...