IXFX27N80Q IXYS, IXFX27N80Q Datasheet

MOSFET N-CH 800V 27A PLUS 247

IXFX27N80Q

Manufacturer Part Number
IXFX27N80Q
Description
MOSFET N-CH 800V 27A PLUS 247
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of IXFX27N80Q

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
320 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
27A
Vgs(th) (max) @ Id
4.5V @ 4mA
Gate Charge (qg) @ Vgs
170nC @ 10V
Input Capacitance (ciss) @ Vds
7600pF @ 25V
Power - Max
500W
Mounting Type
Through Hole
Package / Case
PLUS247™-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.3 Ohms
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
27 A
Power Dissipation
500 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
800
Id(cont), Tc=25°c, (a)
27
Rds(on), Max, Tj=25°c, (?)
0.32
Ciss, Typ, (pf)
7600
Qg, Typ, (nc)
170
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
481
Rthjc, Max, (ºc/w)
0.26
Package Style
PLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFX27N80Q
Manufacturer:
ST
Quantity:
5 000
HiPerFET
Power MOSFETs
Q-CLASS
Single MOSFET Die
N-Channel Enhancement Mode
Avalanche Rated, Low Qg,
High dV/dt, Low t
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
V
V
I
I
R
© 2002 IXYS All rights reserved
D25
DM
AR
GSS
DSS
J
JM
stg
L
DGR
GS
GSM
AR
AS
D
GS(th)
DSS
DSS
DS(on)
d
V
V
V
V
Note 1
V
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.063 in.) from case for 10 s
Mounting torque
Test Conditions
V
S
GS
DS
GS
GS
J
J
C
C
C
C
C
J
C
DS
GS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C, pulse width limited by T
= 25 C
= 25 C
= 25 C
= 25 C
= 0 V, I
= V
= 0 V
= 20 V, V
= V
= 10 V, I
I
150 C, R
DM
GS
rr
DSS
, di/dt 100 A/ s, V
, I
TM
D
D
= 1mA
= 4mA
D
= 0.5 • I
DS
G
= 2
= 0
D25
TO-264
PLUS 247
TO-264
GS
= 1 M
DD
(T
T
J
J
V
= 25 C, unless otherwise specified)
DSS
= 125 C
JM
800
IXFK 27N80Q
IXFX 27N80Q
min.
2.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
0.4/6 Nm/lb.in.
800
800
108
500
150
300
2.5
20
30
27
27
60
5
max.
320 m
100
100 nA
10
4.5 V
6
2 mA
V/ns
mJ
W
C
C
C
C
V
A
V
V
V
V
A
A
A
g
g
J
PLUS 247
G = Gate
S = Source
Features
Applications
Advantages
TO-264 AA (IXFK)
IXYS advanced low Q
Low gate charge and capacitances
- easier to drive
- faster switching
International standard packages
Low R
Rated for unclamped Inductive load
switching (UIS) rated
Molding epoxies meet UL 94 V-0
flammability classification
AC motor control
Temperature and lighting controls
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
PLUS 247
mounting
Space savings
High power density
V
I
R
t
D25
rr
DSS
DS(on)
DS (on)
G
TM
250 ns
TM
D
(IXFX)
G
package for clip or spring
= 800
=
= 320 m
D
S
D = Drain
TAB = Drain
DS98722A (12/02)
27
g
process
V
A
(TAB)
(TAB)

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IXFX27N80Q Summary of contents

Page 1

... I = 4mA GS(th GSS DSS DS DSS 0.5 • I DS(on D25 Note 1 © 2002 IXYS All rights reserved IXFK 27N80Q IXFX 27N80Q Maximum Ratings 800 = 1 M 800 108 2 DSS 500 -55 ... +150 150 -55 ... +150 300 0.4/6 Nm/lb.in. Characteristic Values ( unless otherwise specified) J min. ...

Page 2

... I ,-di/dt = 100 Note: 1. Pulse test, t 300 s, duty cycle d IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J min. typ. max. Note 7600 ...

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