IXFR21N100Q IXYS, IXFR21N100Q Datasheet - Page 2
IXFR21N100Q
Manufacturer Part Number
IXFR21N100Q
Description
MOSFET N-CH 1KV 18A ISOPLUS247
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFR21N100Q.pdf
(4 pages)
Specifications of IXFR21N100Q
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
500 mOhm @ 10.5A, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
5V @ 4mA
Gate Charge (qg) @ Vgs
170nC @ 10V
Input Capacitance (ciss) @ Vds
5900pF @ 25V
Power - Max
350W
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.5 Ohms
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
18 A
Power Dissipation
350 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1000
Id(cont), Tc=25°c, (a)
18
Rds(on), Max, Tj=25°c, (?)
0.50
Ciss, Typ, (pf)
5900
Qg, Typ, (nc)
170
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
417
Rthjc, Max, (ºc/w)
0.30
Package Style
ISOPLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFR21N100Q
Manufacturer:
IXYS
Quantity:
200
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
Note: 1. Pulse width limited by T
SM
RM
d(on)
d(off)
f
S
r
rr
fs
iss
oss
rss
thJC
thCK
SD
RM
G(on)
GS
GD
2. Pulse test, t
3. I
T
= 10.5A
Test Conditions
V
Test Conditions
V
Repetitive; Note 1
I
F
GS
DS
= I
I
F
= 0 V
= 10 V; I
V
V
R
V
Notes 2, 3
= I
T
, V
GS
GS
GS
G
S
= 1
,-di/dt = 100 A/ s, V
GS
= 0 V, V
= 10 V, V
= 10 V, V
300 s, duty cycle d
= 0 V, Notes 2, 3
D
(External), Notes 2, 3
= I
DS
T
DS
DS
= 25 V, f = 1 MHz
JM
= 0.5 • V
= 0.5 • V
R
Notes 2, 3
DSS
(T
DSS
(T
= 100 V
J
J
, I
, I
2 %
= 25 C, unless otherwise specified)
= 25 C, unless otherwise specified)
D
D
= I
= I
T
T
min.
min.
Characteristic Values
16
4,835,592
4,850,072
Characteristic Values
5900
0.15
typ.
typ.
550
170
1.4
22
90
21
18
60
12
38
75
8
4,881,106
4,931,844
0.35
max.
max.
250
1.5
21
84
5,017,508
5,034,796
K/W
K/W
nC
nC
nC
pF
pF
pF
n s
n s
n s
n s
n s
C
S
A
A
V
A
5,049,961
5,063,307
ISOPLUS 247 OUTLINE
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
Q
R
1
2
1
2
IXFR 21N100Q
20.80
15.75
19.81
4.83
2.29
1.91
1.14
1.91
2.92
0.61
3.81
5.59
4.32
Min.
5,187,117
5,237,481
Millimeter
5.45 BSC
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
21.34
16.13
20.32
Max.
5.21
2.54
2.16
1.40
2.13
3.12
0.80
4.32
6.20
4.83
5,486,715
5,381,025
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 .244
.170 .190
Inches
6,306,728B1