IXFR66N50Q2 IXYS, IXFR66N50Q2 Datasheet - Page 4
IXFR66N50Q2
Manufacturer Part Number
IXFR66N50Q2
Description
MOSFET N-CH 500V 50A ISOPLUS247
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFR66N50Q2.pdf
(4 pages)
Specifications of IXFR66N50Q2
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
85 mOhm @ 33A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
5.5V @ 8mA
Gate Charge (qg) @ Vgs
200nC @ 10V
Input Capacitance (ciss) @ Vds
9125pF @ 25V
Power - Max
500W
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.074 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
50 A
Power Dissipation
500 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
50
Rds(on), Max, Tj=25°c, (?)
0.085
Ciss, Typ, (pf)
9125
Qg, Typ, (nc)
200
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
500
Rthjc, Max, (ºc/w)
0.25
Package Style
ISOPLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFR66N50Q2
Manufacturer:
SANYO
Quantity:
1 000
IXYS reserves the right to change limits, test conditions, and dimensions.
100000
10000
180
160
140
120
100
100
1000
80
60
40
20
90
80
70
60
50
40
30
20
10
100
0
0
0.4
3.0
0
0.5
3.5
f
5
T
= 1MHz
J
0.6
Fig. 11. Capacitance
= 125
Fig. 7. Input Admittance
Fig. 9. Source Current vs.
Source-To-Drain Voltage
4.0
10
T
0.7
°
J
C
4.5
= 125
V
V
15
G S
S D
- 40
V
25
0.8
D S
°
- Volts
°
°
- Volts
5.0
C
C
C
20
- Volts
0.9
T
J
= 25
C
C
C
5.5
oss
25
rss
iss
1.0
°
C
6.0
30
1.1
6.5
35
1.2
1.3
7.0
40
1.000
0.100
0.010
0.001
90
80
70
60
50
40
30
20
10
10
0.0001
0
9
8
7
6
5
4
3
2
1
0
0
0
Fig. 12. Maximum Transient Thermal
V
I
I
D
G
20
DS
= 33A
= 10mA
20
0.001
= 250V
Fig. 8. Transconductance
40
Fig. 10. Gate Charge
Pulse Width - Seconds
40
60
Q
Impedance
G
0.01
I
80
- nanoCoulombs
D
60
- Amperes
IXFR66N50Q2
100 120 140 160 180 200
80
0.1
IXYS REF: F_66N50Q2 (94) 05-28-08-C
100
T
125
J
= - 40
1
25
°
C
120
°
C
°
C
140
10