IXTK120N25 IXYS, IXTK120N25 Datasheet

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IXTK120N25

Manufacturer Part Number
IXTK120N25
Description
MOSFET N-CH 250V 120A TO-264
Manufacturer
IXYS
Series
MegaMOS™r
Datasheet

Specifications of IXTK120N25

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
20 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
360nC @ 10V
Input Capacitance (ciss) @ Vds
7700pF @ 25V
Power - Max
730W
Mounting Type
Through Hole
Package / Case
TO-264AA
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.02 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
120 A
Power Dissipation
730 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
250
Id(cont), Tc=25°c, (a)
120
Rds(on), Max, Tj=25°c, (?)
0.018
Ciss, Typ, (pf)
9400
Qg, Typ, (nc)
400
Trr, Typ, (ns)
350
Pd, (w)
560
Rthjc, Max, (k/w)
0.22
Package Style
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTK120N25
Manufacturer:
IXYS
Quantity:
18 000
Part Number:
IXTK120N25P
Manufacturer:
IXYS
Quantity:
768
© 2003 IXYS All rights reserved
High Current
MegaMOS
N-Channel Enhancement Mode
Preliminary Data Sheet
Symbol
V
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
(T
V
V
I
I
R
DM
D25
D(RMS)
AR
GSS
DSS
J
JM
stg
L
DGR
GS
GSM
AR
D
GS(th)
DSS
AS
DSS
DS(on)
d
J
= 25°C unless otherwise specified)
T
1.6 mm (0.063 in.) from case for 10 s
Mounting torque
TO-264
Test conditions
T
T
Continuous
Transient
T
External lead current limit
T
T
I
T
Test Conditions
V
V
V
V
V
V
Pulse test, t ≤ 300 ms, duty cycle d ≤ 2%
T
T
S
C
J
J
C
C
C
J
GS
C
C
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C MOSFET chip capability
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
= 0 V, I
= V
= ±20 V DC, V
= V
= 0 V
= 10 V, I
DM
GS
DSS
, di/dt ≤ 100 A/µs, V
, I
TM
D
D
D
= 1 mA
= 250 µA
= 0.5 I
G
FET
= 2 Ω
DS
D25
= 0
GS
= 1.0 MΩ
DD
≤ V
T
T
J
J
= 25°C
= 125°C
DSS
JM
250
IXTK 120N25
Min. Typ.
2.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum ratings
0.7/6
±20
±30
250
250
120
480
730
150
300
4.0
75
90
80
10
10
±200
4.0
50
20 mΩ
Nm/lb.in.
Max.
3 mA
V/ns
mJ
° C
° C
° C
° C
nA
µA
W
A
A
A
A
V
V
g
J
V
V
V
V
TO-264 AA (IXTK)
G = Gate
S = Source
Features
Applications
Advantages
V
I
R
Low R
Rugged polysilicon gate cell structure
International standard package
Fast switching times
Motor controls
DC choppers
Switched-mode power supplies
Easy to mount with one screw
(isolated mounting screw hole)
Space savings
High power density
D25
DSS
DS(on)
G
DS (on)
D
S
HDMOS
= 250
= 120
=
D
Tab = Drain
TM
= Drain
20 mΩ Ω Ω Ω Ω
DS98879D(11/03)
process
A
V
D (TAB)

Related parts for IXTK120N25

IXTK120N25 Summary of contents

Page 1

... V DC GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 ms, duty cycle d ≤ 2% © 2003 IXYS All rights reserved IXTK 120N25 Maximum ratings 250 = 1.0 MΩ 250 ±20 ±30 120 75 480 4.0 ≤ DSS 730 -55 ... +150 150 -55 ... +150 300 ...

Page 2

... Pulse test, t ≤ 300 µs, duty cycle d ≤ 25A, -di/dt = 100 A/µ IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXYS reserves the right to change limits, test conditions, and dimensions. Characteristic values Min ...

Page 3

... Norm alized to I DS(on) Value vs 10V 2 1.8 1.6 1 100 120 140 160 180 200 220 I - Amperes D © 2003 IXYS All rights reserved 220 200 180 160 140 120 100 1.5 2 2.5 2.6 2.4 7V 2.2 6V 1.8 1.6 5V 1.4 1.2 0.8 0.6 ...

Page 4

... T = 125º 25º 0.4 0.6 0 Volts S D Fig. 11. Capacitance 10000 1000 f = 1MHz 100 Volts D S IXYS reserves the right to change limits, test conditions, and dimensions. 140 120 100 5 1.2 1.4 1000 C iss 100 C oss 10 C rss ...

Page 5

... IXYS All rights reserved Fig . 13. M axim tan Puls e W idth - millis ec onds IXTK 120N25 ...

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