IXFB300N10P IXYS, IXFB300N10P Datasheet

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IXFB300N10P

Manufacturer Part Number
IXFB300N10P
Description
MOSFET N-CH 100V 300A PLUS264
Manufacturer
IXYS
Series
Polar™r
Datasheet

Specifications of IXFB300N10P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5.5 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
300A
Vgs(th) (max) @ Id
5V @ 8mA
Gate Charge (qg) @ Vgs
279nC @ 10V
Input Capacitance (ciss) @ Vds
23000pF @ 25V
Power - Max
1500W
Mounting Type
Through Hole
Package / Case
3-PLUS264™
Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
300
Rds(on), Max, Tj=25°c, (?)
0.0055
Ciss, Typ, (pf)
23
Qg, Typ, (nc)
279
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
1500
Rthjc, Max, (ºc/w)
0.10
Package Style
PLUS264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Polar
HiPerFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
I
E
dV/dt
P
T
T
T
T
T
F
Weight
Symbol
(T
BV
V
I
I
R
© 2008 IXYS CORPORATION, All rights reserved
D25
LRMS
DM
A
GSS
DSS
J
JM
stg
L
SOLD
C
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
J
DSS
= 25°C, unless otherwise specified)
TM
Test Conditions
T
T
Continuous
Transient
T
Leads Current Limit, RMS
T
T
T
I
T
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
Mounting force
V
V
V
V
V
V
Test Conditions
S
Power MOSFET
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 175°C
= 25°C to 175°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
TM
= 0V, I
= V
= ±20V, V
= V
= 0V
= 10V, I
DM
GS
, V
DSS
, I
DD
D
D
D
= 3mA
≤ V
= 8mA
= 50A, Note 1
DS
DSS
= 0V
, T
J
GS
≤ 175°C
= 1MΩ
Preliminary Technical Information
T
J
= 150°C
JM
IXFB300N10P
100
30..120/6.7..27
Min.
3.0
Characteristic Values
-55 ... +175
-55 ... +175
Maximum Ratings
Typ.
1500
100
100
±20
±30
300
900
100
175
300
260
75
20
10
3
Max.
±200
5.0
1.5
5.5
25
V/ns
N/lb.
mA
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
V
V
A
A
A
A
g
J
V
I
R
t
PLUS264
Features
• Fast intrinsic diode
• Avalanche Rated
• Low R
• Low package inductance
Advantages
Applications
• DC-DC coverters
• Battery chargers
• Switched-mode and resonant-mode
• DC choppers
• AC and DC motor drives
• Uninterrupted power supplies
• High speed power switching
G = Gate
S = Source
D25
rr
power supplies
applications
Easy to mount
Space savings
High power density
Low gate drive requirement
DS(on)
DSS
G
D
DS(ON)
S
TM
= 100V
= 300A
≤ ≤ ≤ ≤ ≤ 5.5mΩ Ω Ω Ω Ω
≤ ≤ ≤ ≤ ≤ 200ns
(IXFB)
and Q
D
TAB = Drain
G
= Drain
DS100015(07/08)
(TAB)

Related parts for IXFB300N10P

IXFB300N10P Summary of contents

Page 1

... GSS DSS DS DSS 10V 50A, Note 1 DS(on © 2008 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXFB300N10P Maximum Ratings 100 = 1MΩ 100 GS ±20 ±30 300 75 900 JM 100 3 ≤ 175° 1500 -55 ... +175 175 -55 ... +175 300 260 30..120/6.7..27 10 Characteristic Values Min ...

Page 2

... I 84 DSS D D25 107 0.13 Characteristic Values (T = 25°C, unless otherwise specified) J Min. Typ. JM 0.71 10 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFB300N10P PLUS264 TM (IXFB) Outline Max °C/W 0.10 °C/W Max. 300 A 1000 A 1.3 V 200 ns μ ...

Page 3

... IXYS CORPORATION, All rights reserved 2.4 2.8 3.2 3.6 4.0 = 150A Value D = 300A 150A D 75 100 125 150 175 75 100 125 150 175 IXFB300N10P Fig. 2. Output Characteristics @ 150ºC 300 V = 15V GS 10V 9V 250 8V 200 150 7V 100 0.0 0.4 0.8 1.2 1 ...

Page 4

... DC 100ms 0.001 100 1000 IXFB300N10P Fig. 8. Forward Voltage Drop of Intrinsic Diode T = 150º 0.3 0.4 0.5 0.6 0.7 0.8 0 Volts SD Fig. 10. Capacitance MHz 0 ...

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