2SK4021(Q) Toshiba, 2SK4021(Q) Datasheet

no-image

2SK4021(Q)

Manufacturer Part Number
2SK4021(Q)
Description
MOSFET N-CH 250V 4.5A PW-MOLD2
Manufacturer
Toshiba
Datasheet

Specifications of 2SK4021(Q)

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1 Ohm @ 2.5A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
4.5A
Vgs(th) (max) @ Id
3.5V @ 1mA
Gate Charge (qg) @ Vgs
10nC @ 10V
Input Capacitance (ciss) @ Vds
440pF @ 10V
Power - Max
20W
Mounting Type
Through Hole
Package / Case
2-7J2B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Switching Regulators and DC-DC Converter Applications
Motor Drive Applications
Absolute Maximum Ratings
Thermal Characteristics
Low drain-source ON-resistance: R
High forward transfer admittance: |Y
Low leakage current: I
Enhancement mode: V
Drain−source voltage
Drain−gate voltage (R
Gate−source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Note:
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon
reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristic
DD =
Characteristic
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS V)
50 V, T
GS
DC
Pulse (Note 1)
DSS
= 20 kΩ)
th
ch
= 1.5 to 3.5 V (V
= 25°C (initial), L = 4.28 mH, R
(Note 1)
(Note 2)
= 100 μA (max) (V
DS (ON)
fs
(Ta = 25°C)
| = 4.5 S (typ.)
Symbol
V
V
V
E
E
T
I
I
T
DGR
P
GSS
DSS
I
DP
AR
stg
R
R
AS
AR
D
ch
DS
Symbol
D
2SK4021
th (ch−a)
th (ch−c)
= 0.8 Ω (typ.)
= 10 V, I
DS
= 250 V)
−55 to 150
Rating
D
250
250
±20
150
4.5
4.5
2.0
18
20
51
= 1 mA)
1
Max
6.25
125
G
= 25 Ω, I
°C / W
°C / W
Unit
Unit
AR
mJ
mJ
°C
°C
W
V
V
V
A
A
A
= 4.5 A
Weight: 0.36 g (typ.)
0.8 MAX.
JEDEC
JEITA
TOSHIBA
0.9
1.1 MAX.
1. GATE
2. DRAIN
3. SOURSE
(HEAT SINK)
1
6.5 ± 0.2
5.2 ± 0.2
2.3
2
2.3
0.6 ± 0.15
3
0.6 ± 0.15
2-7J2B
2009-09-29
2SK4021
1
2
3
Unit: mm
0.6 MAX.
0.6 MAX.
1.1 ± 0.2

Related parts for 2SK4021(Q)

2SK4021(Q) Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...

Page 2

... Note 4: A line under a Lot No. identifies the indication of product Labels. [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment ...

Page 3

I – Common source Tc = 25°C Pulse Test Drain-source voltage V ( – ...

Page 4

(ON) 3.0 Common source 2.5 Pulse Test 2 4.5A 1.5 1 1.0 0.5 0 −100 − 100 150 Case temperature Tc (°C) Capacitance – ...

Page 5

Safe operating area 100 I D max (pulsed) * 100 μ max (continuous 0.1 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in V DSS max ...

Page 6

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

Related keywords