2SK3388(TE24L,Q) Toshiba, 2SK3388(TE24L,Q) Datasheet - Page 3

• Manufacturer Part Number: 2SK3388(TE24L,Q)
• Description: MOSFET N-CH 250V 20A SC-97
• Manufacturer: Toshiba

Specifications of 2SK3388(TE24L,Q)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 105 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 3.5V @ 1mA
• Gate Charge (qg) @ Vgs: 100nC @ 10V
• Input Capacitance (ciss) @ Vds: 4000pF @ 10V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: 2-9F1B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100
20
16
12
50
40
30
20
10
10
8
4
0
0
1
0
0
1
Common source
V DS = 10 V
Pulse test
Common source
V DS = 10 V
Pulse test
Drain-source voltage V
Gate-source voltage V
1
2
10
Drain current I
100
4.5
2
4
⎪Y
I
I
D
D
Tc = −55°C
6
fs
– V
– V
Tc = −55°C
10
⎪ – I
25
DS
GS
D
3
6
D
GS
DS
(A)
Common source
Tc = 25°C
Pulse test
V GS = 3.5 V
(V)
(V)
100
4
8
4.2
3.8
4
25
100
10
5
3
1000
100
100
80
60
40
20
10
0
4
3
2
1
0
0
0
1
Common source
Tc = 25°C
Pulse test
Common source
Tc = 25°C
Pulse test
Drain-source voltage V
4
Gate-source voltage V
5
Drain current I
R
V GS = 10, 15 V
V
DS (ON)
8
I
DS
D
10
– V
10
10
– V
8
DS
GS
– I
12
D
D
6
GS
DS
(A)
Common source
Tc = 25°C
Pulse test
I D = 20 A
15
V GS = 4 V
(V)
(V)
10
16
5
5.5
4.5
5
2009-09-29
2SK3388
100
20
20