BSS138W L6433 Infineon Technologies, BSS138W L6433 Datasheet

MOSFET N-CH 60V 280MA SOT-323

BSS138W L6433

Manufacturer Part Number
BSS138W L6433
Description
MOSFET N-CH 60V 280MA SOT-323
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet

Specifications of BSS138W L6433

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.5 Ohm @ 200mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
280mA
Vgs(th) (max) @ Id
1.4V @ 26µA
Gate Charge (qg) @ Vgs
1.5nC @ 10V
Input Capacitance (ciss) @ Vds
43pF @ 25V
Power - Max
500mW
Mounting Type
Surface Mount
Package / Case
SOT-323
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000245412
Rev. 2.41
Features
• N-channel
• Enhancement mode
• Logic level
• dv /dt rated
• Pb-free lead-plating; RoHS compliant
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Reverse diode dv /dt
Gate source voltage
ESD class
(JESD22-A114-HBM)
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
SIPMOS
Type
BSS138W
BSS138W
®
Small-Signal-Transistor
Package
PG-SOT-323
PG-SOT-323
j
=25 °C, unless otherwise specified
Tape and Reel
L6327: 3000
L6433: 10000
/
Symbol Conditions
I
I
dv /dt
V
P
T
D
D,pulse
j
GS
tot
, T
l
stg
T
T
T
I
di /dt =200 A/µs,
T
T
D
A
A
A
j,max
A
=0.28 A, V
=25 °C
=70 °C
=25 °C
=25 °C
page 1
Marking
SWs
SWs
=150 °C
DS
Product Summary
V
R
I
D
=48 V,
DS
DS(on),max
-55 ... 150
55/150/56
PG-SOT-323
0 (<250V)
Value
0.28
0.22
1.12
0.50
±20
6
60
3.5
0.28
BSS138W
Unit
A
kV/µs
V
W
°C
V
A
2009-11-19

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BSS138W L6433 Summary of contents

Page 1

SIPMOS Small-Signal-Transistor Features • N-channel • Enhancement mode • Logic level • dv /dt rated • Pb-free lead-plating; RoHS compliant Type Package BSS138W PG-SOT-323 BSS138W PG-SOT-323 Maximum ratings =25 °C, unless otherwise specified j Parameter Continuous drain ...

Page 2

Parameter Thermal characteristics Thermal resistance, junction - minimal footprint Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source leakage current Gate-source leakage current Drain-source on-state resistance Transconductance Rev. 2.41 Symbol Conditions R thJA =25 °C, unless ...

Page 3

Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode ...

Page 4

Power dissipation P =f(T ) tot A 0.5 0.4 0.3 0.2 0 Safe operating area I =f =25 ° parameter limited by on-state ...

Page 5

Typ. output characteristics I =f =25 ° parameter 0 0.5 0.4 0.3 0.2 0 Typ. transfer characteristics I =f(V ); ...

Page 6

Drain-source on-state resistance =10 V DS(on % -60 - Typ. capacitances C =f MHz; T ...

Page 7

Typ. gate charge V =f =0.2 A pulsed GS gate D parameter 0.2 0.4 Q Rev. 2.41 14 Drain-source breakdown voltage V =f(T BR(DSS) 70 ...

Page 8

Package Outline: Footprint: Rev. 2.41 Packaging: page 8 BSS138W 2009-11-19 ...

Page 9

... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system ...

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