BSS138LT1G ON Semiconductor, BSS138LT1G Datasheet - Page 5

• Manufacturer Part Number: BSS138LT1G
• Description: MOSFET N-CH 50V 200MA SOT-23
• Manufacturer: ON Semiconductor
• Type: Power MOSFETr

Specifications of BSS138LT1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.5 Ohm @ 200mA, 5V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 200mA
• Vgs(th) (max) @ Id: 1.5V @ 1mA
• Input Capacitance (ciss) @ Vds: 50pF @ 25V
• Power - Max: 225mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.5 Ohm @ 5 V
• Forward Transconductance Gfs (max / Min): 0.1 S
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.2 A
• Power Dissipation: 225 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Current, Drain: 200 mA
• Package Type: SOT-23 (TO-236)
• Polarization: N-Channel
• Resistance, Drain To Source On: 3.5 Ohms
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 20 ns
• Time, Turn-on Delay: 20 ns
• Transconductance, Forward: 100 Millimhos
• Voltage, Breakdown, Drain To Source: 50 V
• Voltage, Gate To Source: ±20 VDC
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 3.5Ohm
• Drain-source On-volt: 50V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 200mA
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BSS138LT1GOSTR

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A
A1
E
1
3
D
e
2
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
b
H
E
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SEE VIEW C
0.037
0.95
0.035
0.9
0.031
N. American Technical Support: 800−282−9855 Toll Free
Europe, Middle East and Africa Technical Support:
Japan Customer Focus Center
PACKAGE DIMENSIONS
0.8
VIEW C
SOLDERING FOOTPRINT*
USA/Canada
Phone: [phone]
Phone: 81−3−5773−3850
L1
L
http://onsemi.com
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
q
0.25
c
5
SCALE 10:1
0.037
0.95
NOTES:
1. DIMENSIONING AND TOLERANCING PER
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
4. 318−01 THRU −07 AND −09 OBSOLETE,
STYLE 21:
ANSI Y14.5M, 1982.
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
NEW STANDARD 318−08.
0.079
DIM
PIN 1. GATE
A1
H
L1
A
D
E
2.0
b
c
e
L
E
inches
mm
2. SOURCE
3. DRAIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MIN
MILLIMETERS
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
2.40
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
MAX
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
2.64
1.11
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
MIN
INCHES
BSS138LT1/D
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
MAX