BSS138LT1G ON Semiconductor, BSS138LT1G Datasheet - Page 12

MOSFET N-CH 50V 200MA SOT-23

BSS138LT1G

Manufacturer Part Number
BSS138LT1G
Description
MOSFET N-CH 50V 200MA SOT-23
Manufacturer
ON Semiconductor
Type
Power MOSFETr
Datasheets

Specifications of BSS138LT1G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.5 Ohm @ 200mA, 5V
Drain To Source Voltage (vdss)
50V
Current - Continuous Drain (id) @ 25° C
200mA
Vgs(th) (max) @ Id
1.5V @ 1mA
Input Capacitance (ciss) @ Vds
50pF @ 25V
Power - Max
225mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3.5 Ohm @ 5 V
Forward Transconductance Gfs (max / Min)
0.1 S
Drain-source Breakdown Voltage
50 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.2 A
Power Dissipation
225 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Current, Drain
200 mA
Package Type
SOT-23 (TO-236)
Polarization
N-Channel
Resistance, Drain To Source On
3.5 Ohms
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
20 ns
Time, Turn-on Delay
20 ns
Transconductance, Forward
100 Millimhos
Voltage, Breakdown, Drain To Source
50 V
Voltage, Gate To Source
±20 VDC
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
3.5Ohm
Drain-source On-volt
50V
Gate-source Voltage (max)
±20V
Drain Current (max)
200mA
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
BSS138LT1GOSTR

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Product Bulletin #16134
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Issue Date: 11 Jul 2008
Rev.07-02-06
Page 12 of 14