BSS159N H6906 Infineon Technologies, BSS159N H6906 Datasheet - Page 7
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BSS159N H6906
Manufacturer Part Number
BSS159N H6906
Description
MOSFET N-CH 60V 230MA SOT23
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet
1.BSS159N_L6327.pdf
(9 pages)
Specifications of BSS159N H6906
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Depletion Mode
Rds On (max) @ Id, Vgs
3.5 Ohm @ 160mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
230mA
Vgs(th) (max) @ Id
2.4V @ 26µA
Gate Charge (qg) @ Vgs
2.9nC @ 5V
Input Capacitance (ciss) @ Vds
44pF @ 25V
Power - Max
360mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Rev. 1.32
13 Forward characteristics of reverse diode
I
parameter: T
16 Drain-source breakdown voltage
V
F
=f(V
BR(DSS)
0.001
0.01
0.1
70
50
SD
1
-60
=f(T
)
0
j
); I
j
-20
D
=250 µA
0.4
150 °C
20
V
T
SD
j
60
[°C]
0.8
[V]
25 °C
100
150 °C, 98%
25 °C, 98%
1.2
140
180
page 7
15 Typ. gate charge
V
parameter: V
GS
=f(Q
-1
-2
-3
-4
6
5
4
3
2
1
0
0
gate
); I
DD
D
=0.16 A pulsed
Q
0.2 VDS(max)
gate
1
[nC]
0.5 VDS(max)
0.8 VDS(max)
BSS159N
2006-12-11
2