BSP322P L6327 Infineon Technologies, BSP322P L6327 Datasheet - Page 5
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BSP322P L6327
Manufacturer Part Number
BSP322P L6327
Description
MOSFET P-CH 100V 1A SOT-223
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet
1.BSP322P_L6327.pdf
(9 pages)
Specifications of BSP322P L6327
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
800 mOhm @ 1A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
1A
Vgs(th) (max) @ Id
1V @ 380µA
Gate Charge (qg) @ Vgs
16.5nC @ 10V
Input Capacitance (ciss) @ Vds
372pF @ 25V
Power - Max
1.8W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.8 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1 A
Power Dissipation
1800 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000212229
Rev 1.04
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
=f(V
=f(V
DS
GS
4
3
2
1
0
4
3
2
1
0
); T
0
0
); |V
j
=25 °C
j
GS
DS
-10 V
|>2|I
2
1
-7 V
D
-5 V
|R
DS(on)max
-3.5 V
-3 V
4
2
-V
-V
DS
GS
[V]
[V]
-4 V
25 °C
6
3
8
125 °C
4
page 5
10
5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
1.6
1.4
1.2
0.8
0.6
0.4
0.2
D
=f(I
1
0
3
2
1
0
); T
0
0
D
j
); T
=25 °C
GS
j
=25 °C
1
1
-3 V
-I
-I
D
D
2
2
[A]
[A]
-3.5 V
3
3
BSP322P
-7 V
-10 V
-5 V
-4 V
2011-04-05
4
4