BSP322P L6327 Infineon Technologies, BSP322P L6327 Datasheet - Page 5

• Manufacturer Part Number: BSP322P L6327
• Description: MOSFET P-CH 100V 1A SOT-223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP322P L6327

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 800 mOhm @ 1A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1A
• Vgs(th) (max) @ Id: 1V @ 380µA
• Gate Charge (qg) @ Vgs: 16.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 372pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.8 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1 A
• Power Dissipation: 1800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000212229

Rev 1.04
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
=f(V
=f(V
DS
GS
4
3
2
1
0
4
3
2
1
0
); T
0
0
); |V
j
=25 °C
j
GS
DS
-10 V
|>2|I
2
1
-7 V
D
-5 V
|R
DS(on)max
-3.5 V
-3 V
4
2
-V
-V
DS
GS
[V]
[V]
-4 V
25 °C
6
3
8
125 °C
4
page 5
10
5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
1.6
1.4
1.2
0.8
0.6
0.4
0.2
D
=f(I
1
0
3
2
1
0
); T
0
0
D
j
); T
=25 °C
GS
j
=25 °C
1
1
-3 V
-I
-I
D
D
2
2
[A]
[A]
-3.5 V
3
3
BSP322P
-7 V
-10 V
-5 V
-4 V
2011-04-05
4
4