BSP322P L6327 Infineon Technologies, BSP322P L6327 Datasheet - Page 7
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BSP322P L6327
Manufacturer Part Number
BSP322P L6327
Description
MOSFET P-CH 100V 1A SOT-223
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet
1.BSP322P_L6327.pdf
(9 pages)
Specifications of BSP322P L6327
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
800 mOhm @ 1A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
1A
Vgs(th) (max) @ Id
1V @ 380µA
Gate Charge (qg) @ Vgs
16.5nC @ 10V
Input Capacitance (ciss) @ Vds
372pF @ 25V
Power - Max
1.8W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.8 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1 A
Power Dissipation
1800 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000212229
Rev 1.04
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
120
115
110
105
100
0.1
10
95
90
85
80
75
70
AV
1
-60
=f(T
); R
1
j
GS
); I
j(start)
=25 Ω
-20
D
=-250 µA
10
20
t
T
AV
j
60
[°C]
[µs]
125 °C
100
100
100 °C
140
25 °C
1000
180
page 7
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
12
10
V
8
6
4
2
0
g(th)
g s(th)
GS
0
gate
); I
DD
Q
D
=-1 A pulsed
g s
5
- Q
Q
g
gate
Q
sw
[nC]
Q
20 V
g d
10
50 V
BSP322P
80 V
Q
g ate
2011-04-05
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