IPD30N03S2L-10 Infineon Technologies, IPD30N03S2L-10 Datasheet - Page 7
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IPD30N03S2L-10
Manufacturer Part Number
IPD30N03S2L-10
Description
MOSFET N-CH 30V 30A TO252-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPD30N03S2L-10.pdf
(8 pages)
Specifications of IPD30N03S2L-10
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
10 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
2V @ 50µA
Gate Charge (qg) @ Vgs
42nC @ 10V
Input Capacitance (ciss) @ Vds
1200pF @ 25V
Power - Max
100W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000254465
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPD30N03S2L-10
Manufacturer:
INFINEON
Quantity:
12 500
Rev. 1.0
13 Typical avalanche energy
E
parameter: I
15 Typ. drain-source breakdown voltage
V
AS
BR(DSS)
= f(T
700
600
500
400
300
200
100
36
35
34
33
32
31
30
29
28
27
0
-60
25
= f(T
j
)
7.5 A
30 A
15 A
D
j
); I
-20
D
= 1 mA
75
20
T
T
j
j
60
[°C]
[°C]
100
125
140
180
175
page 7
14 Typ. gate charge
V
16 Gate charge waveforms
GS
V
V
= f(Q
GS
GS
12
10
8
6
4
2
0
0
gate
Q
Q
gs
gs
); I
D
= 30 A pulsed
8
Q
Q
g
g
Q
Q
Q
gate
gd
gd
16
[nC]
IPD30N03S2L-10
6 V
Q
Q
24
gate
gate
24 V
2006-07-18
32