IPD30N10S3L-34 Infineon Technologies, IPD30N10S3L-34 Datasheet

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IPD30N10S3L-34

Manufacturer Part Number
IPD30N10S3L-34
Description
MOSFET N-CH 100V 30A TO252-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPD30N10S3L-34

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
31 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
2.4V @ 29µA
Gate Charge (qg) @ Vgs
31nC @ 10V
Input Capacitance (ciss) @ Vds
1976pF @ 25V
Power - Max
57W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.031 Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
30 A
Power Dissipation
57 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IPD30N10S3L-34
IPD30N10S3L-34TR
SP000261248

Available stocks

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Part Number
Manufacturer
Quantity
Price
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IPD30N10S3L-34
Manufacturer:
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Quantity:
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Manufacturer:
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Rev. 1.1
OptiMOS
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Type
IPD30N10S3L-34
®
-T Power-Transistor
1)
2)
Package
PG-TO252-3-11
j
=25 °C, unless otherwise specified
1)
Symbol
I
I
E
I
V
P
T
D
D,pulse
AS
j
AS
GS
tot
, T
Marking
3N10L34
stg
T
T
T
I
T
D
C
C
C
C
=15A
page 1
=25°C, V
=100°C, V
=25°C
=25°C
Conditions
GS
GS
Product Summary
V
R
I
=10V
D
DS
DS(on),max
=10V
1)
-55 ... +175
55/175/56
Value
120
138
±20
30
20
30
57
PG-TO252-3-11
IPD30N10S3L-34
100
31
30
2008-04-08
Unit
A
mJ
A
V
W
°C
V
m
A

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IPD30N10S3L-34 Summary of contents

Page 1

... IEC climatic category; DIN IEC 68-1 Rev. 1.1 Product Summary Marking 3N10L34 Symbol Conditions I T =25° =100° =25°C D,pulse =15A =25°C tot stg page 1 IPD30N10S3L-34 DS DS(on),max D PG-TO252-3-11 Value =10V =10V 120 138 30 ±20 57 -55 ... +175 55/175/56 100 Unit °C 2008-04-08 ...

Page 2

... V V =0V 1mA (BR)DSS =29µA GS(th =80V, V =0V DSS T =25° =80V, V =0V =125° =16V, V =0V GSS =4.5V, I =30A DS( page 2 IPD30N10S3L-34 Values min. typ. max 2 100 - - 1.2 1.7 2.4 - 0.01 0 100 - 32.2 41.8 - 25.8 31.0 2008-04-08 Unit K/W V µ ...

Page 3

... Symbol Conditions C iss V =0V, V =25V oss f =1MHz C rss t d(on =20V =30A d(off =80V, I =30A 10V plateau =25° S,pulse V =0V, I =30A =25° =50V /dt =100A/µ page 3 IPD30N10S3L-34 Values min. typ. max. - 1520 1976 - 380 - =10V 3 0 150 Unit pF 494 120 1 2008-04-08 ...

Page 4

... parameter 1000 100 Rev. 1.1 2 Drain current 150 200 0 4 Max. transient thermal impedance Z = f(t thJC parameter µs 10 µ 100 µ 100 [V] page 4 IPD30N10S3L- ≥ 100 150 T [° 0.5 0.1 0.05 0.01 single pulse - [s] p 200 - 2008-04-08 ...

Page 5

... Typ. output characteristics ° parameter 120 Typ. transfer characteristics parameter Rev. 1.1 6 Typ. drain-source on-state resistance R = f(I DS(on) parameter 4 3 [V] 8 Typ. drain-source on-state resistance R = f(T DS(on °C 175 °C -55 ° [V] page 5 IPD30N10S3L- ° 3 [ -60 - 100 T [° 140 180 2008-04-08 ...

Page 6

... Rev. 1.1 10 Typ. capacitances 150 µ 100 140 180 12 Typ. avalanche characteristics parameter: T 100 °C 25 °C 0.1 0.8 0 1.2 1.2 1.4 1.4 0.1 [V] [V] page 6 IPD30N10S3L- MHz [ j(start) 100 °C 150 ° 100 t [µs] AV Ciss Coss Crss °C 1000 2008-04-08 ...

Page 7

... A 100 [° Typ. gate charge pulsed GS gate D parameter gate Rev. 1.1 14 Typ. drain-source breakdown voltage V BR(DSS) 115 110 105 100 95 90 125 175 16 Gate charge waveforms s(th (th [nC] page 7 IPD30N10S3L- -55 - 105 T [° 145 Q gate 2008-04-08 ...

Page 8

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.1 page 8 IPD30N10S3L-34 2008-04-08 ...

Page 9

... Revision History Version Rev. 1.1 Date 1.1 08.04.2008 1.1 08.04.2008 page 9 IPD30N10S3L-34 Changes Page 1: V changed from ±16V to GS ±20V Page 3: Footnote 2) added 2008-04-08 ...

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