IPD70N03S4L-04 Infineon Technologies, IPD70N03S4L-04 Datasheet

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IPD70N03S4L-04

Manufacturer Part Number
IPD70N03S4L-04
Description
MOSFET N-CH 30V 70A TO252-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPD70N03S4L-04

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.3 mOhm @ 70A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
70A
Vgs(th) (max) @ Id
2.2V @ 30µA
Gate Charge (qg) @ Vgs
48nC @ 10V
Input Capacitance (ciss) @ Vds
3300pF @ 25V
Power - Max
68W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4.3 m Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
70 A
Power Dissipation
31 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IPD70N03S4L-04
IPD70N03S4L-04TR
SP000274986

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Part Number
Manufacturer
Quantity
Price
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Manufacturer:
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Quantity:
2 100
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IPD70N03S4L-04
Manufacturer:
INFINEON
Quantity:
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Part Number:
IPD70N03S4L-04
0
Rev. 2.0
OptiMOS
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• Ultra low Rds(on)
• 100% Avalanche tested
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Type
IPD70N03S4L-04
®
-T2 Power-Transistor
2)
Package
PG-TO252-3-11
j
=25 °C, unless otherwise specified
1)
Symbol
I
I
E
I
V
P
T
D
D,pulse
AS
j
AS
GS
tot
, T
Marking
4N03L04
stg
T
T
V
T
I
T
T
D
C
C
C
C
C
GS
=70 A
page 1
=25 °C, V
=100 °C,
=25 °C
=25 °C
=25 °C
=10 V
Conditions
2)
GS
Product Summary
V
R
I
D
=10 V
DS
DS(on),max
-55 ... +175
55/175/56
Value
280
±16
70
70
57
70
68
PG-TO252-3-11
IPD70N03S4L-04
4.3
30
70
2007-03-09
Unit
A
mJ
A
V
W
°C
V
m
A

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IPD70N03S4L-04 Summary of contents

Page 1

... Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev. 2.0 Product Summary DS(on),max I D Marking 4N03L04 Symbol Conditions I T =25 ° =100 ° = =25 °C D,pulse = =25 ° =25 °C tot stg page 1 IPD70N03S4L- 4 PG-TO252-3-11 Value Unit 280 ± -55 ... +175 °C 55/175/56 2007-03-09 ...

Page 2

... Conditions R thJC R minimal footprint thJA cooling area =25 °C, unless otherwise specified (BR)DSS =30 µA GS(th = DSS T =25 ° = =125 ° = =85 ° = GSS =4 =35 A DS( page 2 IPD70N03S4L-04 Values min. typ. max 2 1.0 1 1000 = 100 - 4.9 5.7 - 3.6 4.3 Unit K µ 2007-03-09 ...

Page 3

... d(off = = plateau =25 ° S,pulse = =25 ° = /dt =100 A/µ 2.2K/W the chip is able to carry 100A at 25°C. For detailed thJC 2 (one layer, 70 µm thick) copper area for drain page 3 IPD70N03S4L-04 Values min. typ. max. - 2500 3300 = 640 - = 3 0.6 0. Unit pF 830 280 1.3 ...

Page 4

... parameter 1000 100 Rev. 2.0 2 Drain current 100 150 200 4 Max. transient thermal impedance Z = f(t thJC parameter µ µs 10 100 µ 100 [V] page 4 IPD70N03S4L- ≥ 100 150 T [° 0.5 0.1 0.05 0.01 single pulse - [s] p 200 - 2007-03-09 ...

Page 5

... T j 280 240 200 160 120 Rev. 2.0 6 Typ. drain-source on-state resistance R = f(I DS(on) parameter [V] 8 Typ. drain-source on-state resistance R = f(T DS(on) 7 -55 °C 25 °C 175 ° -60 [V] page 5 IPD70N03S4L- ° 3 120 100 T [° 160 200 140 180 2007-03-09 ...

Page 6

... V SD Rev. 2.0 10 Typ. capacitances 300µ 100 140 180 12 Typ. avalanche characteristics parameter: T 100 10 25 °C 1 0.8 1 1.2 1.4 [V] page 6 IPD70N03S4L- MHz [ j(start) 100°C 150° 100 t [µs] AV Ciss Coss Crss 25 30 25°C 1000 2007-03-09 ...

Page 7

... Typical avalanche energy parameter 250 200 17.5 A 150 100 [° Typ. gate charge pulsed GS gate D parameter gate Rev. 2.0 14 Typ. drain-source breakdown voltage V BR(DSS 125 175 16 Gate charge waveforms s(th (th [nC] page 7 IPD70N03S4L- -55 - 105 T [° 145 Q gate 2007-03-09 ...

Page 8

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 page 8 IPD70N03S4L-04 2007-03-09 ...

Page 9

... Revision History Version Rev. 2.0 Date page 9 IPD70N03S4L-04 Changes 2007-03-09 ...

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